2017
DOI: 10.1002/sia.6242
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Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co and N+ beam implantations

Abstract: Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25-keV Co À and N + ions with several fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ions/cm 2 . The pristine and the ion implanted films were characterized by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-Vis spectrometry. The RBS spectra reveal signature of only cobalt and… Show more

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“…The relation between absorption coefficient (A) and band gap (E g ) of the material with the incident photon energy hν is (Ahν) 2 = B(hν‐E g ), where B is constant . The direct band gap of semiconductor can be determined by drawing the tangent on the linear part of the graph between (Ahν) 2 and photon energy (hν) (Tauc plots; as shown in Figure A,B, respectively).…”
Section: Resultsmentioning
confidence: 99%
“…The relation between absorption coefficient (A) and band gap (E g ) of the material with the incident photon energy hν is (Ahν) 2 = B(hν‐E g ), where B is constant . The direct band gap of semiconductor can be determined by drawing the tangent on the linear part of the graph between (Ahν) 2 and photon energy (hν) (Tauc plots; as shown in Figure A,B, respectively).…”
Section: Resultsmentioning
confidence: 99%