Ion-induced crystallization and amorphization at crystal/amorphous interfaces of silicon

Wang, Zhong-Lie; Itoh, Noriaki; Matsunami, Noriaki; Zhao, Qing‐Tai

doi:10.1016/0168-583x(95)00369-x

Cited by 23 publications

(12 citation statements)

References 26 publications

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“…As has been pointed out by Wang et al, the influence that ion bombardment has on crystal growth can be divided into thermal annealing effects and damage induced effects. 28 The former are related to the heating of localized zones in the target, and the latter to those atoms that have been displaced from their initial positions and have potential energies above the ground state. These two effects could lead to either amorphization or recrystallization of the target, but in our case we will only be interested in the conditions for the crystallization.…”

Section: Resultsmentioning

confidence: 99%

Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Marqués

Caturla

Rubia

et al. 1996

Journal of Applied Physics

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We use molecular dynamics techniques to study the ion beam induced enhancement in the growth rate of microcrystals embedded in an amorphous silicon matrix. The influence of the ion beam on the amorphous-to-crystal transformation was separated into thermal annealing effects and defect production effects. Thermal effects were simulated by heating the sample above the amorphous melting point, and damage induced effects by introducing several low energy recoils in the amorphous matrix directed at the crystalline grain. In both cases, the growth rate of the microcrystals is enhanced several orders of magnitude with respect to the pure thermal process, in agreement with experimental results. The dynamics of the crystallization process and the defect structures generated during the growth were analyzed and will be discussed.

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Section: Resultsmentioning

confidence: 99%

Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Marqués

Caturla

Rubia

et al. 1996

Journal of Applied Physics

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“…Furthermore, the regrowth rate dependence on a given parameter may exhibit diverse behaviours for different values of the other parameters controlling the process. For instance, the dependence of the regrowth rate on the beam flux differs for light and heavy ion bombardment, for substrate temperatures near and far from the reversal temperature Tr, for the different a/c interface positions regarding the damage generation profile [93,94]. A review of the main experimental data on IBIEC and IBIIA can be found in [95].…”

Section: Ion Induced Crystallization and Amorphizationmentioning

confidence: 98%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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“…16,17 This combination of atomic manipulation and (sequential) atomic-scale visualization was without precedent until we observed that the e-beam can induce the crystallization of certain amorphous materials including oxides such as SrTiO 3 , a process we refer to as e-beam sculpting. 18 Notably, the interaction between the electron beam and amorphous matter was actively explored in the 1980's and 1990's, and e-beam crystallization of a number of important semiconductors such as Si [19][20][21][22] and GaAs [22][23][24] has been reported. However, these experiments lacked the capability to probe beyond mesoscopic level studies, and no attempts to actively direct and control the process were reported.…”

Section: Electron Matter Interactions In Stemmentioning

confidence: 99%

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

et al. 2018

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Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

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Ion-induced crystallization and amorphization at crystal/amorphous interfaces of silicon

Cited by 23 publications

References 26 publications

Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

Ion beam induced surface and interface engineering

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

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