Ion Irradiation-Induced Changes in Surface Morphology of InSb

The development of porosity in single-crystal germanium and silicon-germanium alloys (c-Si1−x Gex) of (100) orientation was studied under bombardment with 140 keV Ge− ions over a wide range of temperatures (−180 to 400 °C) and ion fluences up to 1 × 1018 ions/cm2. The surface swelling and morphology were investigated using multi-characterization techniques including optical profilometry, transmission electron microscopy, and scanning electron microscopy. The initiation of porosity and the evolution of the near-surface microstructure strongly depend on the ion fluence, the irradiation temperature, and the stoichiometry of the substrate. Significant results and new findings include: (i) the fact that, over the entire temperature and stoichiometry range, porosity is only developed once the substrate is rendered amorphous; (ii) with increasing Si content in the alloy, the onset of porosity is pushed to higher fluences; (iii) porosity is observed for Si contents in the alloy up to 23% but not higher under the irradiation conditions used; and (iv) in all cases the initiation of porosity was observed to occur at the surface of the amorphous alloy above a threshold fluence. This last result strongly suggests that the mechanism for initiation of porosity is via preferential vacancy segregation and clustering at the surface of the amorphous alloy. Particularly at elevated temperatures, preferential sputtering of the Si-Ge atomic species in the alloy also plays an important role in developing the surface topography and porosity in alloys. Such effects are discussed along with the implications of our results for mechanisms of porosity in Ge and its alloys.

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Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Alkhaldi

Kremer

Hansen

et al. 2016

Journal of Applied Physics

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Void evolution and porosity under arsenic ion irradiation in GaAs_1−xSb_xalloys

Alkhaldi

Kluth

Kremer

et al. 2017

J. Phys. D: Appl. Phys.

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Ion Irradiation-Induced Changes in Surface Morphology of InSb

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Cited by 2 publications

References 3 publications

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Void evolution and porosity under arsenic ion irradiation in GaAs_1−xSb_xalloys

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Ion Irradiation-Induced Changes in Surface Morphology of InSb

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Cited by 2 publications

References 3 publications

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Void evolution and porosity under arsenic ion irradiation in GaAs1−xSbxalloys

Contact Info

Product

Resources

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Void evolution and porosity under arsenic ion irradiation in GaAs_1−xSb_xalloys