Ion irradiation of multi‐walled boron nitride nanotubes

Lehtinen, Ossi; Nikitin, Timur; Krasheninnikov, Arkady V.; Sun, Litao; Khriachtchev, Leonid; Banhart, Florian; Terao, Takeshi; Golberg, Dmitri; Keinonen, J.

doi:10.1002/pssc.200982956

Cited by 19 publications

(8 citation statements)

References 13 publications

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“…Similar changes in the Raman lineshape have been reported for GaN [47] and diamond with varying crystal sizes [48].We therefore attribute the new Raman feature to nc-BN. This implies that at this fluence the effect of irradiation is to induce amorphization due to increased stress in the sample.The fluence dependence of the formation of nc-BN has been observed in previous work for B and other ions with the threshold fluence for nucleation for B implantation being in the order of 10 15 ions/cm 2 [44], [50].Other studies have also shown that c-BNwas not detected at fluences of the order if 10 18 ions/cm 2 with h-BN as a starting material [24,51].…”

Section: Haadf-stem and Hrtemsupporting

confidence: 65%

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

Aradi

Naidoo

Cummings

et al. 2019

Diamond and Related Materials

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We have reported on the implantation of boron ioninto hexagonal boron nitride (h-BN) material to aid the nucleation ofcubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keVat fluences of the order of 10 15 and10 17 ions/cm 2 at room temperature.High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation inimage contrast in samples irradiated to a fluence of 1×10 15 ions/cm 2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated withc-BN after implantation.

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Section: Haadf-stem and Hrtemsupporting

confidence: 65%

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

Aradi

Naidoo

Cummings

et al. 2019

Diamond and Related Materials

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“…The only experiment, 492 which was recently carried out, indicated that BN MWNTs subjected to 40 keV Ar + ion beam are amorphized at irradiation doses of ϳ10 15 cm −2 ͑Fig. 63͒ and that the amount of damage can be considerably reduced if the sample is kept at elevated temperatures ͑600°C.͒ The irradiation dose at which amorphization occurred corresponded to ϳ2.5 dpa, which is close to the values typical for the amorphization of carbon nanotubes.…”

Section: B Ion Irradiationmentioning

confidence: 51%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

944

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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“…Synthesis of c-BN has been found to be of interest because of its excellent physicochemical properties, some of which are superior to those of diamond [1,2]. Hexagonal BN also exhibits extreme properties especially where thermal stability and chemical inertness are concerned [3,4]. The production of a thin film c-BN layer on h-BN surface would have advantages in combining the properties of both materials.…”

Section: Introductionmentioning

confidence: 99%

Investigations on the characterization of ion implanted hexagonal boron nitride

Aradi¹,

Naidoo²,

Erasmus³

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14 -1 x 10 16 ions/cm 2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmision Electron Microscopy (TEM) results also are reported briefly.

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Ion irradiation of multi‐walled boron nitride nanotubes

Cited by 19 publications

References 13 publications

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

Ion and electron irradiation-induced effects in nanostructured materials

Investigations on the characterization of ion implanted hexagonal boron nitride

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