Ion-luminescence properties of GaN films being developed for IPEM

Rossi, Paolo; Doyle, B.L.; Vizkelethy, G.; McDaniel, F. D.; Knapp, J. A.; Jauregui, H.; Villone, Janelle

doi:10.1016/j.nimb.2007.11.072

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…As previously published [7], Gallium Nitride self-supporting films have shown to be the optimal material for the IPEM applications, with reasonable sample preparation and very intense luminescence. The particular materials being investigated include various n-doped GaN as well as InGaN/GaN multiple quantum well structures (MQWs).…”

Section: Materials and Sample Preparationmentioning

confidence: 58%

“…It must be radiation tolerant so performance is not lost during experiments, and ideally the film would be easy to handle for applying it to each part/device. In addition, homogeneous luminescence is required across the entire surface, otherwise critical position information could be lost [6,7]. Considering the phenomenon of blooming, the photon scattering within the material is expected to increase with increasing thickness, such that minimizing this parameter is critical.…”

Section: Introductionmentioning

confidence: 99%

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The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility

Branson

Doyle

Vizkelethy

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Materials and Sample Preparationmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility

Branson

Doyle

Vizkelethy

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Many phosphors have been assessed by employing this simple experimental setup and the TBP. GaN or the new Quantum Wells InGaN showed to be the most promising phosphors in terms of high efficiency, low beam degradation, and robustness [11,12]. We note that in addition to our IPEM application, this new TBP technique that measures a phosphor lifetime to a few nanoseconds resolution without modifying the sample, may also find numerous applications in other IBA and nuclear microprobe studies that use ion-luminescence to characterize materials [13].…”

Section: Resultsmentioning

confidence: 99%

Phosphors’ lifetime measurement employing the Time Between Photons method

Rossi

Doyle

Brice

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tThe Time Between Photons theory (hereafter TBP) is applied to the evaluation of the lifetime of phosphors employed in the Ion Photon Emission Microscope (IPEM). IPEM allows Radiation Effects Microscopy (REM) without focused ion beams and appears to be the best tool for the radiation hardness assessment of modern integrated circuit at cyclotron energies. IPEM determines the impact point of a single ion onto the sample by measuring the light spot produced on a thin phosphor layer placed on the sample surface. The spot is imaged by an optical microscope and projected at high magnification onto a Position Sensitive Detector (PSD). Phosphors, when excited by an ion, emit photons with a particular lifetime, which is important to evaluate. We measured the statistical distribution of the Time Between consecutive detected Photons (TBP) for several phosphors and have been able to link it to their lifetime employing a theory that is derived in this paper. The single-photon signals are provided by the IPEM-PSD, or faster photomultipliers when high-speed materials had to be assessed.

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“…Organic-phosphor foils require a large thickness to produce enough photons, which results in poor spatial resolution. [18] According to the parameter of objective lens and the ZnS(Ag) thickness, the resolution can be calculated as shown in Fig. 6.…”

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confidence: 99%

Ion Photon Emission Microscope for Single Event Effect Testing in CIAE

Zhang¹,

Guo²,

Liu³

et al. 2017

Chinese Phys. Lett.

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Ion photon emission microscopy (IPEM) is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device (CCD). A thin ZnS film doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS(Ag) film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6 μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.

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Ion-luminescence properties of GaN films being developed for IPEM

Cited by 5 publications

References 6 publications

The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility

The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility

Phosphors’ lifetime measurement employing the Time Between Photons method

Ion Photon Emission Microscope for Single Event Effect Testing in CIAE

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