Ion Matter Interaction

Avasthi, D.K.; Mehta, Goverdhan

doi:10.1007/978-94-007-1229-4_2

Cited by 12 publications

(5 citation statements)

References 40 publications

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“…The energy dissipated from the scattering of the carriers with the phonons is the fifth and final phase ) buffer 2 at 950 V identified and causes the thermal destruction of the MOSFET at a time of 240 and 250 ps for buffer 1 and buffer 2, respectively. Figure [9,10] shows the lattice temperature along the heavy ion strike for the buffer 1 and buffer 2 designs, and both exhibit the behavior where they reach 3000 K around 3-4 μm deep in the device. In addition, we see that the buffer 1 design has multiple peaks for the lattice temperature with the first peak near the burnout region 3-4 μm deep in the device, the second peak at the interface between the epi and buffer layers, and a third peak near the buffer/substrate interface.…”

Section: Improved Designsmentioning

confidence: 99%

“…The Monte Carlo based program is a general-purpose code developed by Los Alamos National Laboratory that can simulate the transport of various particles including heavy ions and secondary particles generated from the strike. These secondary particles are created from the coulombic interactions between the heavy ion and the orbital electrons of the host material [9]. These electrons have enough energy to cause further ionization of the material.…”

Section: Seb Simulationsmentioning

confidence: 99%

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Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

McPherson

Hitchcock

Chow

et al. 2020

MSF

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This paper describes the mechanisms behind the failure of silicon carbide (SiC) Power MOSFETs (metal oxide semiconductor field effect transistors) when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET under the strike of a silver ion with a Linear Energy Transfer (LET) of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. The failure occurs near the interface between the epitaxial layer and the substrate layer due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. Two improved designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device’s tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the specific on-resistance (Ron,sp) by only 5%.

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Section: Improved Designsmentioning

confidence: 99%

Section: Seb Simulationsmentioning

confidence: 99%

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

McPherson

Hitchcock

Chow

et al. 2020

MSF

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“…The DPA is a useful metric for comparing damage caused by ion irradiation under different experimental conditions. It provides a normalized value that takes into consideration the ion energy, target properties and irradiation fluence, and allows for comparisons amongst different ion-target combinations [106]. The DPA accounts for all of these parameters to provide a single value that represents the total damage endured by a target surface.…”

Section: Resultsmentioning

confidence: 99%

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications

Mahendra

Murmu

Acharya

et al. 2023

Sensors

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Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co2MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co2MnGa/Pd films with an initial PMA were irradiated with 30 keV 40Ar+ ions with fluences (ions·cm−2) between 1 × 1013 and 1 × 1015 Ar·cm−2, which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (Keff) decreased from ~153 kJ·m−3 for the un-irradiated film to ~14 kJ·m−3 for the 1 × 1014 Ar·cm−2 irradiated film. The reduced Keff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co2MnGa Heusler alloy for magnetic sensor applications.

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“…This configuration is used to discuss the SEB failure mechanism. When the heavy ion strikes the SiC crystalline lattice, electron-hole pairs are generated [5,6], and the resulting density exceeds the background doping concentration by several orders in the drift region. These charge carriers traverse the devices to their respective terminals, with the electrons going towards the drain Fig.…”

Section: Single-event Burnout Simulations and Resultsmentioning

confidence: 99%

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment

McPherson

Woodworth

Chow

et al. 2022

MSF

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We compare the failure mechanism and performance of a silicon carbide (SiC) semi-superjunction (semi-SJ) power DMOSFET against pure SJ and conventional DMOSFET when struck by a single heavy ion. The Single-Event Burnout (SEB) failure mechanism was identified as the thermal runaway from second breakdown resulting in mesoplasma formation. The semi-SJ design shifts the mesoplasma location from the drift/substrate interface seen in the control device structures to a location along the center of the P-pillar and closer towards the DMOSFET surface, thus significantly improving the SEB threshold voltage (VSEB). The VSEB varies with pillar width and ratio of pillar thickness to drift layer thickness. A maximum value of VSEB is reached when the pillar to drift layer ratio is 0.9 and the pillar width is 2.4 μm. The semi-SJ SEB/breakdown voltage ratio is 100% and 13% higher than the pure SJ and conventional DMOSFET, respectively. Using a new Figure of Merit (FoM), which accounts for the tradeoff between VSEB and on-state performance, we find that the SiC semi-SJ DMOSFET achieves a FoM that is 1.8 and 8 times higher than SJ and conventional DMOSFET, respectively, making the semi-SJ a competitive candidate for radiation hardened applications.

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Ion Matter Interaction

Cited by 12 publications

References 40 publications

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment

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