Introduction to Focused Ion Beams 2005
DOI: 10.1007/0-387-23313-x_2
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Ion - Solid Interactions

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Cited by 52 publications
(55 citation statements)
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“…Ion beams are a method of forming metal plasmas for metal continuum lithographic light sources (Watt et al 2005). Furthermore, the peak intensity was very low for Mo and barely discernible for W when it was run, consistent with the low production efficiency of positive ions with increasing mass since the amount of energy and momentum transferred from the incident gallium ion to the target atom is dependent on the mass ratio of ion and atom (Grehl 2003;Giannuzzi et al 2005). Mo foil was another electrode material used to produce hydrogen continuum radiation in BLP, CfA, and TUe (van Gessel 2009) studies wherein only weak Mo atomic lines were observed in the visible.…”
Section: Possible Artifact: Electrode Emissionmentioning
confidence: 92%
“…Ion beams are a method of forming metal plasmas for metal continuum lithographic light sources (Watt et al 2005). Furthermore, the peak intensity was very low for Mo and barely discernible for W when it was run, consistent with the low production efficiency of positive ions with increasing mass since the amount of energy and momentum transferred from the incident gallium ion to the target atom is dependent on the mass ratio of ion and atom (Grehl 2003;Giannuzzi et al 2005). Mo foil was another electrode material used to produce hydrogen continuum radiation in BLP, CfA, and TUe (van Gessel 2009) studies wherein only weak Mo atomic lines were observed in the visible.…”
Section: Possible Artifact: Electrode Emissionmentioning
confidence: 92%
“…FIB milling of soft materials can result in damage by beam-induced heating and knock-on displacement [21,28,32]. Beam-induced heating occurs over a few tens of nanometers [21] and is negligible for most hard materials [47]. The amount of localized heating also depends on beam current, ion voltage and the thermal conductivity of the sample [21].…”
Section: Discussionmentioning
confidence: 99%
“…1c). This amorphous layer is a consequence of ion implantation, which results from knock-on damage events in which Ga + ions displace atoms in the target material [47].…”
Section: Gallium Contaminationmentioning
confidence: 99%
“…The restrictions for the SIMS applications, particularly, in case of simultaneous high layer resolution and high concentration sensitivity or locality, are also established. Processes of emission during bombardment of the surface with ions of inert gases or electronegative active gases are studied the most thoroughly [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Vt Cherepin Mo Vasylyev Im Makeeva Vm Kolesnik Amentioning
confidence: 99%