Ion tracks in condensed carbonaceous matter

Fink, D.; Chadderton, Lewis T.; Cruz, S. A.; Fahrner, W. R.; Hnatowicz, V.; Kaat, E.H. Te; Melnikov, Alexander; Varichenko, V.S.; Zaǐtsev, A. M.

doi:10.1080/10420159308219719

Cited by 13 publications

(2 citation statements)

References 4 publications

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“…Other track-bearing materials such as cellulose nitrate, polyallyl diglucoll ͑CR39͒, and mica have hardly been considered for applications in, e.g., electronics or medicine. Possibly useful candidates such as other polymers ͑polyimides, polysiloxanes, polysilanes͒, 2-4 diamond, 5,6 or fullerene [7][8][9] ͑the latter three yielding nonetchable tracks with distinct conductivity en-hancement͒ came into focus only recently.…”

Section: Ion-track Applicationsmentioning

confidence: 99%

Metallized Nuclear Tracks in Quasi Metal Oxide Semiconductor Structures for Electronic Devices

Hoppe¹,

Fink

Fahrner³

2008

J. Electrochem. Soc.

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The impact of swift heavy ions on silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths toward the conducting channel in the underlying silicon. In this way, a family of electronic structures has been manufactured [German patent: DE 103 25 150 A1 (2004), and International patent application: WO 2004/10897 A2 (2004)]. The basic characteristics of these tunable electronic material with pores in oxide on silicon (TEMPOS) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working mode, the structures may resemble gatable resistors, capacitors, diodes, transistors, photocells, or sensors, which renders them rather universally applicable in electronics. TEMPOS structures are sensitive to temperature, light, humidity, and organic gases. Light emitting TEMPOS structures have been produced as well. About 60 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, and flip-flops have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics.

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Section: Ion-track Applicationsmentioning

confidence: 99%

Metallized Nuclear Tracks in Quasi Metal Oxide Semiconductor Structures for Electronic Devices

Hoppe¹,

Fink

Fahrner³

2008

J. Electrochem. Soc.

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“…A consequence of the action of ionizing radiation is a sharp change in their properties. Predicting the behavior of materials under harsh operating conditions requires the creation of quantitative models explaining radiation defect formation [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Computer modeling of processes of radiation defection formation in aluminum irradiated by ions

Комаров

Купчишин

Шмыгалева

et al. 2018

Int. j. math. phys.

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The article considers the process of interaction of ions with aluminum and the formation of the radiation defects. The selection of an approximate expression for the interaction cross section is found and the approximation coefficients are found. Algorithms of calculation of a cascade probability function, range of the primary beaten-out atoms, concentration of radiation defects are given. Calculations of cascade probability functions depending on number of interactions and a depth of penetration of particles, ranges of the primary beaten-out atoms (PKA), concentration of radiation defects are made. Regularities of behavior and finding of area of result when calculating cascade probability functions depending on number of interactions and a depth of penetration of particles , concentration of radiation defects for the aluminum irradiated with ions are received. It is necessary to consider various factors: types of flying particles (charged and uncharged, light and Heavy), a real "physical" picture; i.e. processes occurring at interaction of particles with a substance.

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