Ion trajectory distortion and profile tilt by surface charging in plasma etching

Murakawa, Shigemi; Fang, Sychyi; McVittie, J.P.

doi:10.1063/1.111864

Cited by 32 publications

(16 citation statements)

References 9 publications

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“…All measurements from the above approaches have to be done after the plasma processing which are indirect characterizations. Surface potential attained during this charging has been made from the threshold voltage measurement of EEPROM devices [10], from the circuit modeling of observed damage [5] and from ion trajectory simulations for profile distortion [13]. However, all of them cannot tell whether the damage is caused by transient behavior of plasma on-off or steady state charging.…”

Section: Background On Plasma Charging Monitoringmentioning

confidence: 99%

Plasma induced wafer charging sensor

McVittie

1998

Journal of the Chinese Institute of Engineers

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An on-wafer surface charging sensor was developed for real-time measurement of the local charging voltage during plasma processing. This sensor is based on a modified MOS capacitor structure with charging voltage built up between an electrode and the substrate across a thick oxide as an indicator of charging. An array of electrodes are designed to measure the local plasma charging condition across the wafer. The processes needed for this sensor manufacturing are fully compatible with present CMOS processes. Comparisons between different characterization methods of plasma charging are also discussed. This sensor can differentiate the charging condition for different process stages (on-transient, steady state, off-transient). In addition, this sensor provides a faster reading method of charging without further device measurements after plasma processing. From the experimental results of probe measurements in Ar, SF 6 and C 2 CIF 5 plasma, this probe shows excellent capability on real-time monitoring of charging voltage. This sensor can be applied to IC plasma processing and equipment development, and trouble shooting in the future.

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Section: Background On Plasma Charging Monitoringmentioning

confidence: 99%

Plasma induced wafer charging sensor

McVittie

1998

Journal of the Chinese Institute of Engineers

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“…Precise plasma processes are indispensable for the fabrication of ULSI and MEMS devices. However, plasma induces damages to the devices due to irradiation of high energy ultraviolet (UV) photons 41,42 and charged particles 43,44 . As shown in Fig.…”

Section: 4a Introductionmentioning

confidence: 99%

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Samukawa

2014

SpringerBriefs in Applied Sciences and Technology

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Etching profile prediction system was developed by combination of an on-wafer sensor and simulation. We have developed on-wafer UV sensor, on-wafer charge-up sensor, and onwafer sheath shape sensor. These sensors can measure plasma process conditions on the sample stage such as UV irradiation, charge-up voltage in high aspect ratio structures, and ion sheath condition at the plasma/surface interface. Then the output of the sensors can be used for computer simulation. The system can predict etching profile anomaly around large scale 3D structure which causes distortion of ion sheath and ion trajectory. Also, it can predict etching profile anomaly caused by the charge accumulation in high-aspect ratio holes. Also, distribution of UV-radiation damage in materials can be predicted.

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“…1,2 Such surface imperfections are not only a cause of inferior electrical properties but also a source of noise and scattered performance in mechanical resonator devices. Plasma processes are widely utilized and play an indispensable role in MEMS fabrication for both the deposition and the etching of materials.…”

Section: Introductionmentioning

confidence: 99%

Effect of neutral beam etching on mechanical property of microcantilevers

Nishimori

Ueki

Miwa

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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As an effective application of neutral beam etching (NBE) to microelectromechanical systems (MEMS), here we propose a combination of conventional plasma processes and NBE to remove plasma-induced damage. To evaluate the effect of the combined approach quantitatively, we measured the resonance properties of a microcantilever before and after NBE treatment and compared them with a characteristic quantity. The thickness of the damage layer times the imaginary part of the complex Young's modulus (δEds), which is a parameter of surface damage. Although a plasma process makes the damaged surface of the microcantilevers during their fabrication, the removal of that damage by NBE is confirmed as a reduction in δEds. NBE can provide a damage-free surface for MEMS devices without a high-temperature annealing process.

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Ion trajectory distortion and profile tilt by surface charging in plasma etching

Cited by 32 publications

References 9 publications

Plasma induced wafer charging sensor

Plasma induced wafer charging sensor

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Effect of neutral beam etching on mechanical property of microcantilevers

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