Ionic liquid gating control of magnetism of a Co film

Yang, Jie; Wang, Xiaoxia; Jia, Xiaoxiong; Zhang, Yingmei; Li, Xiaoli; Quan, Zheng‐Jun; Zeng, Zhongming; Xu, Xin

doi:10.1016/j.jmmm.2020.167261

Cited by 3 publications

(3 citation statements)

References 35 publications

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“…Supercapacitors (SCs), commonly utilized for energy storage, provide great tools to control magnetism reversibly and robustly with strong ME effects and long device lifespans enabled by electrolyte-gating [28,29]. Promising results of VCM have been realized in SCs gated by liquid electrolyte [30][31][32]. However, the vast majority of the research has mainly focused on the magnetism variation during the charging/ discharging process.…”

Section: Introductionmentioning

confidence: 99%

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

Zhang

et al. 2022

J. Phys.: Condens. Matter

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Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in Fe3O4 via a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in Na2SO4, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPF6 organic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.

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Section: Introductionmentioning

confidence: 99%

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

Zhang

et al. 2022

J. Phys.: Condens. Matter

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“…After several cycles it is observed that it becomes harder for the oxygen ions to migrate back even on application of a positive bias, finally saturating to the coercivity of the negative bias after 16 cycles. This saturation effect that is observed when a voltage is cycled in electrolytes (cyclic voltammetry) is typically linked to increased changes in the structure and composition of the thin film due to repeated migration O 2− ions [360], [415]- [417].…”

Section: Discussionmentioning

confidence: 99%

“…Here it is shown that controlled level of defects through low DPA (≈0. Further details on the effects of defect on magneto-ionics can be found in the following references [360], [415], [418]- [424].…”

Section: Discussionmentioning

confidence: 99%

Defect Engineering Of Perpendicular Magnetic Anisotropy In Cobalt-Based Thin Films

Mahendra

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Magnetic sensors have widespread applications in industrial, security, space, and biomedical fields, offering precise measurement of magnetic fields using principles like the Hall effect and magnetoresistance. Magnetic tunnel junctions (MTJs) have played a pivotal role in advancing magnetic sensing through tunnelling magnetoresistance (TMR), contributing to spintronic devices, memory systems, and magnetic sensors. The magnetic anisotropy of the reference ferromagnetic layer in MTJ sensors is a critical factor, influencing sensitivity, accuracy, and sensing direction. Perpendicular magnetic anisotropy (PMA) is particularly advantageous for detecting magnetic fields perpendicular to the sensor plane, opening possibilities in non-destructive testing and magnetic read heads. However, conventional sensors are restricted to fixed axes, hindering their ability to measure fields in three dimensions. To address this limitation, this thesis proposes a magnetic sensor with a tuneable sensing axis, enabling comprehensive field detection in all axes. As part of this exploration, the thesis investigates ion irradiation as a post-processing technique to modify the PMA of ferromagnetic layers, offering versatility for various applications.Cobalt-based materials, especially CoFeB, are well-known for their suitability in MTJs due to high TMR with MgO and PMA at low thicknesses. Half-metallic Heusler alloys, like Co2MnGa, have gained attention for their theoretically infinite TMR, high spin polarization, and high PMA. This research assesses the effects of ion irradiation on ultra-thin Co2MnGa and CoFeB stacks with PMA.Ion irradiation is a versatile tool for precisely tailoring magnetic stack properties with uniformity and reproducibility. This thesis investigates the impact of 30 keV Ar and Ne ion irradiation on CoFeB and Co2MnGa thin film stacks at low fluences (1 × 1013 to 1 × 1015 ion·cm−2), introducing displacement per atom (DPA) as a predictive parameter for ion-induced magnetic property changes. Results show a consistent reduction in PMA for both materials in half-MTJ stacks after irradiation, which is linked to intermixing of the magnetic layer with its adjacent MgO and heavy metal layers. Ar irradiation has a more pronounced effect due to higher DPA, while Ne irradiation has a milder impact. Co2MnGa displays relatively more resilience to irradiation due to reduced intermixing with adjacent layers, compared to CoFeB. Furthermore, the thesis explores the dynamic tuning of magnetic properties through ionic liquid gating, allowing anisotropy and coercivity manipulation via voltage control. It also delves into ion irradiation's potential to enhance the magneto-ionic effect. Lastly, a novel magnetic sensor design is introduced featuring a tuneable sensing axis, enabling three-dimensional detection capabilities.

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Progress in Epitaxial Thin‐Film Na₃Bi as a Topological Electronic Material

et al. 2021

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Trisodium bismuthide (Na3Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum–energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti‐localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large‐area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness‐dependent and electric‐field‐driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

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Ionic liquid gating control of magnetism of a Co film

Cited by 3 publications

References 35 publications

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

Defect Engineering Of Perpendicular Magnetic Anisotropy In Cobalt-Based Thin Films

Progress in Epitaxial Thin‐Film Na₃Bi as a Topological Electronic Material

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Ionic liquid gating control of magnetism of a Co film

Cited by 3 publications

References 35 publications

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe3O4 via ultracapacitor structure

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe3O4 via ultracapacitor structure

Defect Engineering Of Perpendicular Magnetic Anisotropy In Cobalt-Based Thin Films

Progress in Epitaxial Thin‐Film Na3Bi as a Topological Electronic Material

Contact Info

Product

Resources

About

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe₃O₄ via ultracapacitor structure

Progress in Epitaxial Thin‐Film Na₃Bi as a Topological Electronic Material