of the most promising choices for future nonvolatile memory storage and neuromorphic circuit design. [6,7] Reversible, and ultrafast drifting of oxygen ions through an electric-field-induced redox process, so-called conductive filaments, is proposed as a fundamental process causing the resistance change in transition metal oxide-based memristive devices. [6,[8][9][10] Although redox-based two-terminal memristive devices have demonstrated significant success, they are still pinned down to a number of drawbacks as failing to achieve crucial features of in-memory processing such as high device conductance, achieving well-controlled multilevel memory/forgetting, long-term stability, and scalability over a large scale, all of these restrict the reliability and energy efficiency of the devices. [1,[6][7][8]11,12] In contrast, a multi-terminal solid-state resistive switching device, in which the redox process can be performed precisely by the gate, could offer an alternate platform for filament-less ultrafast memory storage and processing units. Until now, several redox based multi-terminal electronics have also been reported; for instance, Fuller et al. demonstrate parallel programming with an ionic floating-gate memory array and demonstrate its application to scalable neuromorphic computing with a microsecond operating speed. [13] Indeed, the operating speed of most of the reported redoxbased electronics is limited to the micro-or millisecond. [14][15][16] Therefore, there has yet to be a successful implementation of such a high-performing redox-based multi-terminal device and its integration over a large scale, which will, in fact, pave the way for hitherto unrevealed circuit capabilities.More importantly, current state-of-the-art nanoelectronics are confronting with major challenges of a substantial drop in computing performance as a discrepancy between the data handling speeds of processors and memories, referred to as the "memory wall," continues to widen. [1,7,12,[17][18][19][20] This makes the exploration of the integration of analog signal processing with memory operation even more essential. In this scenario, brain-inspired in-memory computing with conceptually new device architectures is emerging paradigm that have a potential to dramatically reduce the energy cost and capabilities, indeed, beyond the von Neumann architectures. [1,7,18,21] All the reports on inmemory-processing are noteworthy; however, none of these devices is capable of operating at ultrahigh processing rates;The pursuit of a universal device that combines nonvolatile multilevel storage, ultrafast writing/erasing speed, nondestructive readout, and embedded processing with low power consumption demands the development of innovative architectures. Although thin-film transistors and redoxbased resistive-switching devices have independently been proven to be ideal building blocks for data processing and storage, it is still difficult to achieve both well-controlled multilevel memory and high-precision ultrafast processing in a single unit, even ...