of the most promising choices for future nonvolatile memory storage and neuromorphic circuit design. [6,7] Reversible, and ultrafast drifting of oxygen ions through an electric-field-induced redox process, so-called conductive filaments, is proposed as a fundamental process causing the resistance change in transition metal oxide-based memristive devices. [6,[8][9][10] Although redox-based two-terminal memristive devices have demonstrated significant success, they are still pinned down to a number of drawbacks as failing to achieve crucial features of in-memory processing such as high device conductance, achieving well-controlled multilevel memory/forgetting, long-term stability, and scalability over a large scale, all of these restrict the reliability and energy efficiency of the devices. [1,[6][7][8]11,12] In contrast, a multi-terminal solid-state resistive switching device, in which the redox process can be performed precisely by the gate, could offer an alternate platform for filament-less ultrafast memory storage and processing units. Until now, several redox based multi-terminal electronics have also been reported; for instance, Fuller et al. demonstrate parallel programming with an ionic floating-gate memory array and demonstrate its application to scalable neuromorphic computing with a microsecond operating speed. [13] Indeed, the operating speed of most of the reported redoxbased electronics is limited to the micro-or millisecond. [14][15][16] Therefore, there has yet to be a successful implementation of such a high-performing redox-based multi-terminal device and its integration over a large scale, which will, in fact, pave the way for hitherto unrevealed circuit capabilities.More importantly, current state-of-the-art nanoelectronics are confronting with major challenges of a substantial drop in computing performance as a discrepancy between the data handling speeds of processors and memories, referred to as the "memory wall," continues to widen. [1,7,12,[17][18][19][20] This makes the exploration of the integration of analog signal processing with memory operation even more essential. In this scenario, brain-inspired in-memory computing with conceptually new device architectures is emerging paradigm that have a potential to dramatically reduce the energy cost and capabilities, indeed, beyond the von Neumann architectures. [1,7,18,21] All the reports on inmemory-processing are noteworthy; however, none of these devices is capable of operating at ultrahigh processing rates;The pursuit of a universal device that combines nonvolatile multilevel storage, ultrafast writing/erasing speed, nondestructive readout, and embedded processing with low power consumption demands the development of innovative architectures. Although thin-film transistors and redoxbased resistive-switching devices have independently been proven to be ideal building blocks for data processing and storage, it is still difficult to achieve both well-controlled multilevel memory and high-precision ultrafast processing in a single unit, even ...

To achieve in-memory processing, the development of an ultrafast and reconfigurable multi-terminal device is required. In article number 2200122, Mohit Kumar, Hyungtak Seo, and co-workers develop a proof-of-concept ultrafast (≈42 ns) and programmable redox thin-film transistor, which is successfully utilized to build in-memory electronics, including logic-in-memory processing, on-demand multiterminal addressable memory, learning, pattern recognition, and classification.

2D materials have been considered as promising candidates for next-generation electronics since they offer unprecedented capability in device performance at the atomic limit through synergistic combination with silicon technology. [1,2] In particular, atomically thin 2D semiconductors, such as transition metal dichalcogenides (TMDs), have a desirable range of bandgap energies in the range between 1.0 and 2.5 eV and high carrier mobility up to 200 cm 2 V −1 s −1 , [3][4][5][6] thereby allowing integration into the silicon platforms. However, there are two ubiquitous problems that 2D semiconductors share with all nanomaterial electronics: environmentally Realizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering.Here, a facile one-step technique is shown that simultaneously utilizes monolayer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS 2 , followed by fluorination by XeF 2 gas exposure. Metal electrodes for source and drain are fabricated on top of FG-covered MoS 2 regions. The MoS 2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm 2 V −1 s −1 at room temperature. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics.

Transition metal dichalcogenides (TMDs) are promising candidates for semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated...

No abstract