Modulation of electrical properties in MoTe<sub>2</sub>by XeF<sub>2</sub>-mediated surface oxidation

Ji, Eunji; Lee, Wanggon; Shin, June-Chul; Seo, Hyungtak; Ihm, Kyuwook; Park, Jin-Woo; Lee, Gwan Hyoung

doi:10.1039/d1na00783a

Cited by 3 publications

(4 citation statements)

References 54 publications

(72 reference statements)

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Section: Resultsmentioning

confidence: 68%

“…The XeF 2 exposure is a widely used technique to etch MoS 2 layers efficiently. [66] Thus, the complete protection of MoS 2 by the graphene layer further confirms that the fluorination under XeF 2 exposure is unidirectional. The difference between the observed results with the observation of Son et al [31] is due to the fact that we have used very high quality ultra-flat SiO 2 /Si surface which shows roughness <0.3 nm (Figure S25, Supporting Information).…”

Section: Unidirectional Fluorinationmentioning

confidence: 62%

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Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Thakur

Haider

Sonia

et al. 2023

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Tailoring the physicochemical properties of graphene through functionalization remains a major interest for next-generation technological applications. However, defect formation due to functionalization greatly endangers the intrinsic properties of graphene, which remains a serious concern. Despite numerous attempts to address this issue, a comprehensive analysis has not been conducted. This work reports a two-step fluorination process to stabilize the fluorinated graphene and obtain control over the fluorinationinduced defects in graphene layers. The structural, electronic and isotopemass-sensitive spectroscopic characterization unveils several not-yet-resolved facts, such as fluorination sites and CF bond stability in partially-fluorinated graphene (F-SLG). The stability of fluorine has been correlated to fluorine coshared between two graphene layers in fluorinated-bilayer-graphene (F-BLG). The desorption energy of co-shared fluorine is an order of magnitude higher than the CF bond energy in F-SLG due to the electrostatic interaction and the inhibition of defluorination in the F-BLG. Additionally, F-BLG exhibits enhanced light-matter interaction, which has been utilized to design a proof-of-concept field-effect phototransistor that produces high photocurrent response at a time <200 µs. Thus, the study paves a new avenue for the indepth understanding and practical utilization of fluorinated graphenic carbon.

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Section: Resultsmentioning

confidence: 68%

Section: Unidirectional Fluorinationmentioning

confidence: 62%

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Thakur

Haider

Sonia

et al. 2023

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“…While most studies used O 2 plasma to oxidize the TMD surface for FET devices, Ji et al used XeF 2 plasma etching for oxidation of MoTe 2 . They showed that since MoTe 2 is prone to oxidation in air, keeping MoTe 2 in air after plasma etching resulted in oxidation due to defects created during plasma treatment.…”

Section: Oxidationmentioning

confidence: 99%

“…556 Oxidation of MoS 2 channels in MoS 2 -based transistors by UV/ O 3 can also enable memristive switching characteristics with potential usage as memtransistors for energy-efficient neuromorphic electronics. 557 While most studies used O 2 plasma to oxidize the TMD surface for FET devices, Ji et al 558 used XeF 2 plasma etching for oxidation of MoTe 2 . They showed that since MoTe 2 is prone to oxidation in air, keeping MoTe 2 in air after plasma etching resulted in oxidation due to defects created during plasma treatment.…”

Section: Fet and Electronic Devicesmentioning

confidence: 99%

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Sovizi,

Angizi,

Ahmad Alem

et al. 2023

Chem. Rev.

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Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

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Control of interaction force in constant-height contact mode atomic force microscopy

Lavanya

Jayanth²

2022

Mechatronics

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Modulation of electrical properties in MoTe₂by XeF₂-mediated surface oxidation

Abstract: Transition metal dichalcogenides (TMDs) are promising candidates for semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated...

Cited by 3 publications

References 54 publications

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Control of interaction force in constant-height contact mode atomic force microscopy

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Modulation of electrical properties in MoTe2by XeF2-mediated surface oxidation

Abstract: Transition metal dichalcogenides (TMDs) are promising candidates for semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated...

Cited by 3 publications

References 54 publications

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Control of interaction force in constant-height contact mode atomic force microscopy

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Product

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Modulation of electrical properties in MoTe₂by XeF₂-mediated surface oxidation