Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

Kassmi, K.; Maimouni, R.; Sarrabayrouse, G.

doi:10.1051/epjap:1999244

Cited by 4 publications

(10 citation statements)

References 26 publications

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“…(13) and (14). This method requires the use of the conduction parameters K 1 and K 2 which depend on the electric field and the quality of the realized structures.…”

Section: Analysis Of the Oxide Thickness And The Defect Depth From Cumentioning

confidence: 99%

“…(13), (14)) and the defect characteristics ( Table 1). The depth values obtained are identical to the oxide thickness D ox (in the order of 45 A).…”

Section: Analysis Of the Oxide Thickness And The Defect Depth From Cumentioning

confidence: 99%

“…In the literature we find a few results concerning a fine analysis of Fowler-Nordheim (FN) current oscillations [14][15][16], particularly of the excess current which results from the degradation of conduction properties of the MOS structures. This degradation is due to the presence of defects, resulting from the technological process, in the oxide layer [12,13]. The principal results [17][18][19][20][21][22] concerning the current oscillations show that the obtained current-voltage characteristics are affected by oscillations which arise from the interference in the oxide conduction band of electron waves reflected at the oxide/semiconductor interface.…”

Section: Introductionmentioning

confidence: 99%

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Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures

Khlifi

Kassmi

Roubi

et al. 2000

phys. stat. sol. (a)

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In this paper we present results concerning the modeling of oscillations in the I-V g characteristics (V g < 0), of metal/ultra-thin oxide/semiconductor (MOS) structures where the oxide thickness is 45 A. From the theoretical models of the literature we have shown that the modeling of oscillations cannot be made by using the conduction parameters (metal/ultra-thin oxide interface barrier, prefactor K 1 ) at low or high electric fields. However, it requires the determination and a fine analysis at low fields of the excess current which is due to the presence of defects in the oxide layer. The oscillations analysis of this excess current enabled us to show on the one hand a good agreement between the field values corresponding to the theoretical and experimental oscillation extrema, and on the other hand to estimate the defect depth.

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“…(13) and (14). This method requires the use of the conduction parameters K 1 and K 2 which depend on the electric field and the quality of the realized structures.…”

Section: Analysis Of the Oxide Thickness And The Defect Depth From Cumentioning

confidence: 99%

“…(13), (14)) and the defect characteristics ( Table 1). The depth values obtained are identical to the oxide thickness D ox (in the order of 45 A).…”

Section: Analysis Of the Oxide Thickness And The Defect Depth From Cumentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures

Khlifi

Kassmi

Roubi

et al. 2000

phys. stat. sol. (a)

Self Cite

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“…The most frequently studied structures are those exhibiting an oxide thickness greater than 10 nm [1][2][3][4][5][6][7][8]. The MOS structures with an ultra-thin oxide thickness (<10 nm) are seldom studied [9][10][11][12][13][14][15]. These types of studies are particularly important as they cover MOS structures used in miniaturized devices [16,17] (transistor MOS, EEPROM memories, etc).…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we propose to study the behaviour of our MOS structures with chromium gates and an oxide thickness varying from 3 to 13 nm after injection of FN constant current in the accumulation (V g < 0) [30] and inversion (V g > 0) regimes [13]. We will analyse the degradation of the oxide layer and particularly of the oxide/semiconductor interface by reviewing the I (V g ) and C(V g ) characteristics.…”

Section: Introductionmentioning

confidence: 99%

Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection

2003

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In this paper, results of the ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim constant current injections are presented. The oxide (silicon dioxide, SiO2) thickness layer of these structures varies from 3 to 12.5 nm for a p-type semiconductor. It is shown that ageing induces trapped charges in the oxide layer (positive and negative near the cathode and positive near the anode) and new interface states at the oxide/semiconductor interface. The positive charge created near the oxide/semiconductor interface, during current injection from the metal (accumulation regime, Vg<0), cannot be observed on current–voltage (I(Vg)) characteristics in the inversion regime (Vg>0). It is shown that these charges can trap electrons injected from the semiconductor during acquisition of the I(Vg) characteristics (Vg>0). This induces a shift in the I(Vg) characteristics as opposed to that what is obtained from capacity–voltage (C(Vg)) characteristics. So, the characteristics (density and centroid) of charges trapped in the oxide layer cannot be obtained, as in the case of thick layers (thickness greater than 20 nm), from the shift obtained from the I(Vg) characteristics in accumulation and inversion regimes. Also, it has been shown that the capture of electrons by the positive charge at the oxide/semiconductor interface promotes the creation of interface states.

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Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization

Khlifi

Kassmi

Aziz

et al. 2004

Eur. Phys. J. Appl. Phys.

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Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

Cited by 4 publications

References 26 publications

Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures

Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures

Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection

Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization

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