IR Emission Band and Multiple-Peak Structure in Photoluminescence Spectra of SnO₂:Mn

Abstract

SnO2:Mn phosphor was synthesized by chemically etching metallic Sn and Mn shots in aqueous HNO3 solution. The synthesized phosphor was investigated by photoluminescence (PL), PL excitation spectroscopies, and PL decay time measurements. The PL spectra of SnO2:Mn exhibited a strong IR emission at ∼800 nm and green/red (G/R) emission. The G/R emission band was also observed in undoped SnO2. These emission bands were attributed to the Mn2+ (IR) and Sn2+ (G/R) ions in the SnO2 host, respectively. The IR emission band exhibited multiple-peak structure with an energy interval of ∼13 meV, in agreement with the Fourier transform analysis. The activation energies of the IR and G/R emission bands were determined to be ∼0.3 eV. The PL decay times were ∼2 ms and ∼2 μs for the IR and G/R emissions, respectively. The integrated PL intensity for the IR emission band showed a gradual increase with increasing temperature at T = 20–130 K. These unique tempearture dependence and multiple-peak structure were well explained by the configurational-coordinate model with the aid of the Franck–Condon principle. Resonant energy transfer from Sn2+ to Mn2+ is the cause of an appearance of the IR emission band in SnO2:Mn.

Photoluminescence Properties and Energy-Level Analysis of Ga2O3:Tb3+Green Phosphor Prepared by Metal Organic Deposition

“…In Fig. 7, the I PL value gradually increases with increasing T above ∼100 K. This phenomenon is very interesting and has also been previously observed in some phosphors, such as Ga 2 O 3 :Cr 3+ , 14 SnO 2 • H 2 O, 42 SnO 2 :Mn 2+ , 43 SnO 2 :Eu 3+ , 44,45 SnCl 2 , 46 MnF 2 , 47 CaCO 3 :Ce 3+ ,Mn 2+ , 48 K 2 SiF 6 :Mn 4+ , 49 BaSiF 6 :Mn 4+ , 50 and ZnSiF 6 • 6H 2 O:Mn 4+ . 51,52 An increase in the PL intensity with increasing T cannot be explained by the simple thermal quenching model of Eq.…”

Influence of Cr Doping on the Morphology and Luminescence of SnO2 Nanostructures

“…A similar luminescence band has also been reported in a previous work where Cr doped SnO 2 microtubes were fabricated by a similar process carried out at higher temperature . Some other doped SnO 2 samples also show a near-infrared emission, as the Mn doped SnO 2 phosphors reported by Arai et al However, some authors have also reported a luminescence band at around 1.6 eV in undoped SnO 2 nanowires synthesized by a hydrothermal method, attributed in that case to high density of surface or defect states. Therefore, although further research is still required, the origin of this emission could be associated with defects characteristic from SnO 2 , the concentration of which, in our case, would be favored by the presence of Cr as a dopant.…”

Effects of Ce Concentration and Temperature on Photoluminescence Intensity in KCl:Ce3+Blue Phosphor

“…5. [23][24][25][26] From Eqs. 3 and 4, we obtain an expression for the integrated PL intensity I PL (T) as…”