2012
DOI: 10.1016/j.jpcs.2011.11.026
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IR-induced features of AgGaGeS4 crystalline semiconductors

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Cited by 15 publications
(9 citation statements)
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“…1.67 10 Ω cm       at 300 K; it represents a weakly pronounced p-type material [4]. AGGS is also known to be transparent in the mid-IR spectral range (0.5-11.5 µm), having the bandgap E g = 2.78 eV [5,6]. Manifesting high enough second-order optical susceptibilities (d 31 = 15 pm/V, d 32 = 8 pm/V and d 33 = 8 pm/V [1]), it is attractive for optical harmonics generation and, in particular, for applications in parametric oscillators [1,[7][8][9].…”
Section: Introductionmentioning
confidence: 99%
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“…1.67 10 Ω cm       at 300 K; it represents a weakly pronounced p-type material [4]. AGGS is also known to be transparent in the mid-IR spectral range (0.5-11.5 µm), having the bandgap E g = 2.78 eV [5,6]. Manifesting high enough second-order optical susceptibilities (d 31 = 15 pm/V, d 32 = 8 pm/V and d 33 = 8 pm/V [1]), it is attractive for optical harmonics generation and, in particular, for applications in parametric oscillators [1,[7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…For instance, utilization of AGGS crystals for the frequency converting in atmospheric lidar sensing applications can result in generating of radiation in the range 1.5-4.0 μm , where strong absorption bands are present for a number of atmospheric gases [10]. The studies of the radiation resistance of AGGS have testified that its laser damage threshold is equal to 250 MW/cm 2 for the pulses with the duration 30 ns and the wavelength 1.064 µm [5].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the crystals have been thoroughly investigated from the viewpoint of their nonlinear optical properties, which may prove promising for the optical frequency doubling. The earlier studies on the quaternary crystals Ag x Ga x Ge 1-x Se 2 [3,20] and, in particular, on AgGaGe 3 Se 8 have testified that the above materials may find their applications in the mid-IR nonlinear optics, since they reveal a remarkable optical transparency (0.60-16 μm) [1] and good optical properties [21].…”
Section: Introductionmentioning
confidence: 99%
“…AgGaGeS 4 (AGGS) is a quaternary halcogenide wide-band semiconductor [1,2]. This crystal belongs to the acentric orthorhombic point symmetry group mm2 (the space group Fdd2) [1,3] and can be regarded as a representative of solid solutions Ag x Ga x Ge 1-x S 2 at x = 0.5 [1].…”
Section: Introductionmentioning
confidence: 99%
“…According to the X-ray studies [1], the unit cell parameters of AGGS are equal to a = 12.028 Å, b = 22.918 Å and c = 6.874 Å (Z = 12). A transparency of AGGS in the mid-IR spectral range (0.5-11.5 µm, with the bandgap E g = 2.78 eV) [3,4] and high enough second-order optical susceptibilities (d 31 = 15 pm/V, d 32 = 8 pm/V and d 33 = 8 pm/V [1]) make the material attractive for various nonlinear optic applications, in particular for parametric oscillators [1,[5][6][7]. Moreover, the studies of its radiation resistance [4] have shown that the laser damage threshold for AGGS is high enough (250 MW/cm 2 for the pulses with the duration 30 ns and the wavelength 1.064 µm).…”
Section: Introductionmentioning
confidence: 99%