IR laser-induced decomposition of 2-chloroethenylsilane for chemical vapour deposition of Si/C phases

Abstract

Infrared multiphoton decomposition of 2-chloroethenylsilane is dominated by dehydrochlorination and by decomposition of the intermediary ethynylsilane, and it affords a solid material consisting of an Si/C/H polymer and silicon carbide. The content of the latter can be increased by using a high-energy fluence of laser radiation.

Emission spectroscopy, harmonic vibrational frequencies, and improved ground state structures of jet-cooled monochloro- and monobromosilylene (HSiCl and HSiBr)

“…[13][14][15] Because its laser induced decomposition can produce SiC and Si/C/H polymer layers, 2-chloroethenylsilane ͑CES͒ is a promising precursor for thin film production. 16,17 Recently, Nalda et al 18 reported observing strong emissions produced by UV photolysis of CES. Using the spectroscopic constants from our previous study, 6 they were able to assign the observed emission bands as due to the HSiCl radical.…”

Gas-phase formation of SiSe in IR laser-co-decomposition of dimethyl selenide and 1,3-disilacyclobutane

“…This excitation spectrum is presented in Fig. 2 (curve b) together with the spectrum obtained from the Si 3 H 8 -DMS mixture (1:1) (curve a, [11]). …”

“…The gaseous SiSe has yet been observed only when applying discharge to aluminium selenide in quartz tube [35] or silicon tetrachloride with selenium [36]. The formation of SiSe upon IR laser-induced codecomposition of a pair of Si-and Se-containing volatile compounds ( [11] and this work) does not appear promising for deposition of nano-sized SiSe due to high reactivity of this species towards other transients present in the irradiated system, although similar technique has been employed for CVD of other nanosized IV-VI metal chalcogenides [37][38][39][40].…”

“…The identification of SiSe species in the IR laser irradiated gaseous DMS-DSCB (1:1) mixture is possible by comparing LIF experiments performed on this mixture and LIF experiments performed on (i) pure gaseous DSCB and (ii) gaseous DMS-trisilane mixture in which SiSe species has been previously detected [11].…”

IR laser-induced co-decomposition of gaseous trisilane and carbon disulfide

“…This synthesis has been achieved through co-decomposition of suitable precursors and transient formation of silicon and chalcogene elements in the gas phase. Thus, the IR laser-induced co-decomposition of dimethyl selenide and trisilane [26] or dimethyl selenide and www.elsevier.com/locate/jaap 1,3-disilacyclobutane [27] yields gaseous SiSe and affords chemical vapor deposition of nanostructured H/Si/Se/C films. In addition, the IR laser co-decomposition of trisilane and thiirane allows gas-phase formation of SiS and chemical vapor deposition of polycarbosilthiane films [28].…”