Iron and chromium impurities in ZnSe as centers of nonradiative recombination

Abstract

A detailed light-induced electron-spin-resonance study of iron and chromium impurities in ZnSe is presented. The position of the Fe 2+ /3+ energy level in the band gap of ZnSe is determined. The role of iron and chromium impurities in nonradiative recombination processes in ZnSe is discussed.

Iron-doped CdxMn1−xTe crystals for mid-IR room-temperature lasers

“…Similar charge transfer below bandgap bands was observed in Ref. [18] for Fe and Cr ions in other II-VI semiconductors. Fig.…”

Synthesis and characterization of Ce, Cu co-doped ZnS nanoparticles

“…Ce doped materials are used for applications in lasers, phosphors, imaging detectors and electroluminescent devices. Ce doped compounds exhibit superconducting phenomena [23], antiferromagnetism [24] and Kondo behavior [25].…”

Photo-ESR and optical studies of Cr photoionization transition in ZnSSe:Cr crystals

“…Only at increased temperatures, at which holes are thermally ionized from shallow acceptors, the Cr 1+ state is not efficiently occupied and is not metastable after turning off the light. Also the Auger type DAP-Cr energy transfer, very efficient in case of Fe doped samples [2][3][4][5], is not efficient in ZnSe:Cr. To prove this we performed the ODMR experiment.…”