Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process

André, J.P.; Alaoui, H.; Deswarte, A.; Zheng, Yulin; Petroff, J. F.; Wallart, X.; Nys, J.P.

doi:10.1016/0022-0248(94)90006-x

Cited by 13 publications

(6 citation statements)

References 18 publications

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“…Indeed, they are not present on the sputter deposition microstructures zone maps built by Movchan et al or Thornton versus the homologous temperature (T/T m , T m being the melting temperature of the deposited material) and where the temperature could be read as the energy of the incident particles [22,23]. Most of the references to such structures, when not resulting from solid-solid or liquid/solid transformations appear in works dealing with chemical vapor deposition techniques (MOCVD [24], glow discharged plasma CVD [25], MOVPE [26], CVD [27], Etc.). However, they could be found in inorganic films grown by reactive magnetron sputtering [28][29][30].…”

Section: Discussionmentioning

confidence: 99%

Columnar growth of ALN by r.f. magnetron sputtering: Role of the {101¯3} planes

Brien¹,

Miska²,

Bolle³

et al. 2007

Journal of Crystal Growth

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Aluminum nitride films prepared by radio frequency magnetron reactive sputtering are usually columnar films with a {0 0 0 2} fiber texture. However, an original homogeneous nanostructural growth mode was observed in this study. The description of the shape of the grains in combination with crystallographic investigations reveals this growth mode is the result of an oblique growth perpendicular to the {1 0 1 3} planes. Observations performed on feather-like grained films show that the {0 0 0 2} planes grow normally to the substrate and the {1 0 1 3} planes grow at 321 away from the normal and perpendicularly to the axis of the branches of the feathers. The growth mode differs from the columnar one only by the shape of the formed grains. The width of the sub-grains ranges from 6 to 24 nm. The observation of this morphology allows us to propose a crystalline growth model of these films and more generally of the classical {0 0 0 2} textured columnar films. The morphologies and microstructures were investigated by scanning electron microscopy, transmission electron microscopy and atomic force microscopy. The crystallographic texture was determined by X-ray diffraction pole figure measurement. Chemical study was performed by Auger electron spectroscopy and energy dispersive spectroscopy of X-rays. r

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Section: Discussionmentioning

confidence: 99%

Columnar growth of ALN by r.f. magnetron sputtering: Role of the {101¯3} planes

Brien¹,

Miska²,

Bolle³

et al. 2007

Journal of Crystal Growth

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“…Even though there is no simple lattice parameter match, epitaxial layers of ␤-FeSi 2 can be grown easily on Si͑001͒ and Si͑111͒ substrates using a variety of techniques such as, molecular beam epitaxy, 4 chemical vapor deposition, 5 electron beam deposition, 6 and metal-organic vapor phase epitaxy. 7 Buried epilayer of the material have also been successfully realized by ion beam synthesis. 8 The possible compatibility of ␤-FeSi 2 with standard silicon processing technology and its potential optoelectronic capabilities, has recently generated considerable interest in the properties of this material.…”

Section: Introductionmentioning

confidence: 99%

Structure and electronic properties ofFeSi2

et al. 1998

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“…These observations from solid-state reactions are worth considering when studying the examples of ε -FeSi, α -FeSi 2 and β -FeSi 2 formed from various epitaxy processes involving organometallic compounds on Si(111) substrate discussed in this section and in the previous section [ 88 ]. Additionally, as in the report by Andre et al , all ε -FeSi, α -FeSi 2 and β -FeSi 2 have been shown to grow at 540 ° C through the control of the Fe to Si ratio, by varying the reacting equivalents of Fe(CO) 5 and Si 2 H 6 during MOVPE process [ 87 ]. Furthermore, all of the reported productions of nanoversions of α − or β -FeSi 2 discussed in this section fall under the VLS-type reactions.…”

Section: Resultsmentioning

confidence: 98%

“…Three other reports of production of nanoscale FeSi involve either organometallic vapor-phase or solid-phase processes that fall in the class of VLS-type reactions, with the growth platform being a Si(111) surface. In the first one, Andre et al reported the production of iron silicide thin films on silicon (111) substrates using the metalorganic vapour phase epitaxy (MOVPE) process with iron pentacarbonyl (Fe(CO) 5 ) and disilane (Si 2 H 6 ) precursors [ 87 ]. For the typical growth of ε -FeSi, the Si wafer was introduced in the reactor, just before the iron silicide growth, and in situ silicon deoxidation was achieved.…”

Section: Resultsmentioning

confidence: 99%

Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

Kolel-Veetil

Keller

2010

Materials

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The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

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Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process

Cited by 13 publications

References 18 publications

Columnar growth of ALN by r.f. magnetron sputtering: Role of the {101¯3} planes

Columnar growth of ALN by r.f. magnetron sputtering: Role of the {101¯3} planes

Structure and electronic properties ofFeSi2

Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

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