Irradiation Damage inn-Type Germanium at 4.2°K

Direct observations of the vacancy and its annealing in germanium

“…This level anneals out at 65 K in good agreement with previous studies. 22,23 A level tentatively associated with the −/= transition of the monovacancy is found 0.14 eV above the valence band. 21 This is in agreement with previous Hall effect measurements which place this level 0.1-0.2 eV above the valence band.…”

Behaviour of Primary Defects in Electron‐Irradiated Germanium

“…Li has been diffused under argon atmosphere in a 1. 3 x IOl4 I n cm-s doped sample at 430 "C during one hour, so that it contains approximately 1015 Li atoms cm-s. Once in the cryostat, the electron concentration in the sample at room temperature was 1.5 x 1017 cm-3. The sample is irradiated with 7.9 x 1015 (1.5 MeV) electrons cm-2 and annealed through isochronal annealing up to 80 OK.…”

“…Fast annealing experiments [12] after electron irradiation pulses point out the existence of an electronic excitation mechanism of the level associated with the "65 O K defect". High field conductivity experiments [3] indicate that this level is not far below the conduction band since, for sufficiently high electric fields (of the order of 100 V cm-l), it can be partly ionized.…”

Self-Interstitial in Germanium

“…It seems paradoxical that defects containing broken bonds should be electrically inert. In contrast with p-Ge, irradiation of n-Ge leads to the formation of Frenkel pairs stable up to 65 K. These are double acceptors [4] and readily understood in terms of charged vacancies [5] with a nearby neutral interstitial. Thus it seems that at 4 K, electron irradiation introduces interstitials in a neutral charge state both in n-Ge and p-Ge.…”