Irradiation damage in xenon-irradiated α-Al2O3 before and after annealing

Li, Bingsheng; Liu, Huiping; Kang, Long; Zhang, Tongmin; Xu, Lijun; Xiong, Anli

doi:10.1016/j.jeurceramsoc.2019.05.035

Cited by 14 publications

(6 citation statements)

References 28 publications

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“…[14] The intensity reduction of GIXRD diffraction peaks and the obvious intensity drop of Raman modes indicates the ion irradiation induced amorphization of grains with PO 3− 4 tetrahedra distortion to some extent. [15,16,17] However, the crystalline structure remains to be dom-056101-2 inant under the present experimental condition since sharp GIXRD and Raman peaks can be clearly observed after He-ion irradiation. [18] In addition, the defects introduced by He-ion irradiation may reduce the transparency of the present apatite ceramics, in turn lead to the intensity reduction of the Raman modes.…”

mentioning

confidence: 73%

Bubble Formation in Apatite Structures by He-Ion Irradiation at High Temperature*

Wu¹,

Gao²,

Lin³

et al. 2020

Chinese Phys. Lett.

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Apatite ceramics Ca10(PO4)6 X 2 (X = F, OH) were prepared by the standard solid state sintering method and irradiated with He ions under a fluence of 5 × 1016 ions/cm2 at 450 °C. Irradiation induced formation and growth of the He bubbles were observed by a transmission electron microscope. Hydroxyapatite Ca10(PO4)6(OH)2 and fluoroapatite Ca10(PO4)6F2 with different He bubble morphologies indicate the influence of OH –/F – substitution on the He-ion annealing efficiency, as well as the structure itself, which affects the process of He bubble evolution and formation. The grain boundaries also act as sinks to accumulate He bubbles. No obvious irradiation damage but slight intensity reduction and left shift of diffraction peaks were observed according to the grazing incidence x-ray diffraction and Raman spectra characterizations, indicating that defects of interstitials and vacancies were generated.

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mentioning

confidence: 73%

Bubble Formation in Apatite Structures by He-Ion Irradiation at High Temperature*

Wu¹,

Gao²,

Lin³

et al. 2020

Chinese Phys. Lett.

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“…In equation (8), S aF (f ) is Cross spectrum of input signal and output signal; S FF (f ): Self spectrum of input signal.…”

Section: Sweep Frequency Analysismentioning

confidence: 99%

“…An on-site test and numerical simulation were conducted by Choi et al 5 The study opined that the deformation of the base plate and large shear stresses on the anchor bolts causing bolt fracture. The microstructure, metallographic examination and hardness testing of material was analyzed [6][7][8][9] and the authors proposed the main cause of fracture is relevant to complex stresses and treatment process.…”

Section: Introductionmentioning

confidence: 99%

Frequency spectrum and fatigue analysis of T-bolt fracture in DT III fastener based on Refined Model

et al. 2020

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It is observed that T-bolt fracture of DT III fastener affects the safety of railway operations. The present study is aimed at finding solution to this critical issue of DT III T-bolt fracture. The paper is based on outcomes of field studies and analysis of relationship between bolt installation torque and stress. A refined DT III fastener model is established based on test data and nonlinear contact theory as per the actual size of each component. It is being observed that head-shank joint is a critical area during service. With respect to fatigue and stress, when the installation torque is less than 300 KN-mm, the bolt is prevented from yielding during installation. To a certain extent it also improves the fatigue life of bolt. From the frequency spectrum point of view, the vibration sensitive frequency band (1050–1100 Hz, 1230–1270 Hz) of bolt in service is very close to the main frequency of bolt vibration (1200 Hz). It may cause bolt fracture. In order to avoid resonance, the train operational speed should be strictly controlled between 115 km/h and 120 km/h.

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“…Raman scattering spectrometry technology is widely performed to investigate ions implanted SiC, and it can precisely characterize the evolution of lattice damage with an implantation dose, similar to the result obtained via Rutherford backscattering in channeling geometry. [12][13][14][15][16] Furthermore, Raman scattering spectrometry is sensitive to a low defect concentration via the decrease in Raman scattering intensity, broadening of phonon Raman bands, and frequency shift. [12] In this study, confocal Raman scattering spectroscopy and photoluminescence spectrum are employed to investigate the H + 2 -implanted 6H-SiC followed by thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation*

Wang¹,

Liao²,

Liu³

et al. 2021

Chinese Phys. B

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Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H 2 + implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 °C to 1100 °C. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.

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Irradiation damage in xenon-irradiated α-Al2O3 before and after annealing

Cited by 14 publications

References 28 publications

Bubble Formation in Apatite Structures by He-Ion Irradiation at High Temperature*

Bubble Formation in Apatite Structures by He-Ion Irradiation at High Temperature*

Frequency spectrum and fatigue analysis of T-bolt fracture in DT III fastener based on Refined Model

Optical spectroscopy study of damage evolution in 6H-SiC by H2+ implantation*

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