Irradiation effects induced in silicon carbide by low and high energy ions

Benyagoub, A.

doi:10.1016/j.nimb.2008.03.113

Cited by 32 publications

(51 citation statements)

References 55 publications

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“…This means that the crystal structure is continuous from the bulk up to the amorphous region and thus the recrystallization was epitaxial. Similar recrystallization results have been reported [16][17][18][19][20][21][22][23] for both 33 keV/nm and 20 keV/nm electronic energy losses at fluences below 10 14 cm -2 . A very high density of planar defects is also visible in the SHI irradiated specimen and accompanying diffraction pattern.…”

Section: Resultssupporting

confidence: 88%

“…Investigations on the creation of radiation damage in SiC by SHI irradiation and the annealing of radiation damage retained after implanting different low energy ions have been reported recently [16][17][18][19][20][21][22][23]. These studies seem to agree that SHI irradiation leads to point defect production in SiC and partially restores crystallinity in a heavily damaged SiC.…”

Section: Introductionmentioning

confidence: 88%

“…These previous studies have given less attention to the effect of SHI irradiation on the migration of initially implanted fission products. Only the migration behaviour of Iodine implanted into 6H-SiC at 600 °C has been investigated after SHI irradiation [17]. The results suggested no influence of swift heavy ions on the migration of Iodine in 6H-SiC.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Hlatshwayo

O’Connell

Skuratov

et al. 2015

J. Phys. D: Appl. Phys.

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The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2×10 16 cm -2 and 1×10 16 cm -2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3×10 14 cm -2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV/nm and 20 keV/nm to fluences below 10 14 cm -2 . Therefore, our results suggest a fluence 2 threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation.Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Hlatshwayo

O’Connell

Skuratov

et al. 2015

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

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“…Whereas the current experimental observation could just support the existence of C-C and Si-Si homonuclear bonds, rather than provide the accurate degree of chemical disorder. Also it is agreed that the total amorphization is attained at critical threshold in deposited nuclear energy loss which is a function of ion energy and temperature (Benyagoub, A., 2008;Bolse, W., 1998). Whether the experimental measured threshold of deposited nuclear energy loss corresponds to the simulated chemical disorder is still an open question.…”

Section: Discussionmentioning

confidence: 99%

Mechanical Properties of Amorphous Silicon Carbide

Xue¹,

Niu²,

Shi³

2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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“…At present, SiC has become a promising material for several technological applications such as semiconductor production equipment parts, cooling elements in nuclear reactors, optical mirror devices in space, etc. [2,5].…”

Section: Introductionmentioning

confidence: 99%

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

Béjar

Mena

Toro

2011

Zeitschrift Für Naturforschung A

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Biomorphic SiC/Si composites were produced from pine and beech wood, and the corresponding electrical conductivity was determined as a function of the temperature. Firstly, wood preforms were pyrolized at 1050 • C in nitrogen. Then, the pyrolized preforms were impregnated with liquid silicon and kept at 1600 • C for 2 h in vacuum. The SiC/Si composites were obtained due to the produced carbothermal reaction. As expected, the resulting electrical conductivity of these composites increased with the temperature and with the silicon content.

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Irradiation effects induced in silicon carbide by low and high energy ions

Cited by 32 publications

References 55 publications

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Mechanical Properties of Amorphous Silicon Carbide

Electrical Conductivity of SiC/Si Composites Obtained from Wood Preforms

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