Irradiation effects on nanocrystalline materials

Chang, Yong-Qin; Guo, Qiang; Zhang, Jing; Chen, Lin; Long, Yi; Wan, Fa-Rong

doi:10.1007/s11706-013-0199-3

Cited by 41 publications

(15 citation statements)

References 48 publications

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“…Such twin activity and dislocation-driven grain rotation can still be attributed to dislocation formation, propagation and adsorption [ 13 , 22 ]. The understanding of the active deformation mechanisms is essential to support the application of NC metals, for example, in microelectrical mechanical systems (MEMS) [ 23 ], hydrogen storage materials [ 24 ], radiation-resistant materials for nuclear reactors [ 25 ], applications for wear and corrosion protection [ 6 , 26 ] and for flexible electrical components [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

Kobler

Brandl

Hahn

et al. 2016

Beilstein J. Nanotechnol.

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SummaryThe atomistic mechanisms active during plastic deformation of nanocrystalline metals are still a subject of controversy. The recently developed approach of combining automated crystal orientation mapping (ACOM) and in situ straining inside a transmission electron microscope was applied to study the deformation of nanocrystalline PdxAu1− x thin films. This combination enables direct imaging of simultaneously occurring plastic deformation processes in one experiment, such as grain boundary motion, twin activity and grain rotation. Large-angle grain rotations with ≈39° and ≈60° occur and can be related to twin formation, twin migration and twin–twin interaction as a result of partial dislocation activity. Furthermore, plastic deformation in nanocrystalline thin films was found to be partially reversible upon rupture of the film. In conclusion, conventional deformation mechanisms are still active in nanocrystalline metals but with different weighting as compared with conventional materials with coarser grains.

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Section: Introductionmentioning

confidence: 99%

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

Kobler

Brandl

Hahn

et al. 2016

Beilstein J. Nanotechnol.

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“…[4][5][6] The hypothesis is, the smaller the grain, the larger the grain boundary area, which acts as an effective sink for the radiation-induced defects. In the context of nuclear materials, nanomaterials such as Yittria Stabilized Zirconia (YSZ), MgGa 2 O 4 , and TiN have been predicted to be more resistant to radiation-induced amorphization or net defect accumulation (for YSZ) as compared to their bulk counterpart.…”

Section: Introductionmentioning

confidence: 99%

Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Dey

Mardinly

Wang

et al. 2016

Phys. Chem. Chem. Phys.

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Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.

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“…Oleh yang demikian, kesan mengion pada dos yang tinggi telah memusnahkan dan ikatan kimia seperti yang dilihat pada Rajah 4 terutamanya pada puncak 3180 cm -1 . Sinaran mengion juga boleh digunakan untuk mengaruh perubahan struktur suatu bahan dan ia digunakan untuk mengubah saiz, struktur fasa dan sifat fizikal suatu bahan (Chang et al 2013).…”

Section: Analisis Perubahan Struktur Kimiaunclassified

Peningkatan Kecekapan Pemisahan Air Menggunakan g-C3N4 yang Disinar Gama

Mohamed

Safaei

Ismail³

et al. 2019

JSM

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Dalam kajian ini, kesan sinar gama ke atas bahan semikonduktor g-C 3 N 4 kGy (0.1 kGy dan 0.5) dibincangkan dan dibandingkan dengan sampel yang tidak disinar untuk melihat perbezaanya. Bahan g-C 3 N 4 disintesis dari urea melalui proses pempolimeran haba pada suhu 520°C. Struktur dan morfologi g-C 3 N 4 dianalisis dengan menggunakan pembelauan Sinar-X (XRD), spektroskopi transformasi Fourier inframerah (FT-IR), mikroskop pengimbas elektron pancaran medan dengan spektroskopi tenaga sinar-X (FESEM-EDX), spektroskopi cahaya nampak-ultraungu (UV-Vis) dan ketumpatan arus (LSV). Sinar gama telah mengubah struktur ikatan g-C 3 N 4 dan mengurangkan sela jalur iaitu daripada 2.80 eV kepada 2.72 eV. Di samping itu, sampel g-C 3 N 4 yang disinar pada 0.1 kGy menghasilkan prestasi lima kali ganda lebih tinggi iaitu daripada 3.59 µAcm-2 kepada 14.2 µAcm-2 pada 1.23 V lawan Ag/AgCl dalam larutan elektrolit 0.5 M Na 2 SO 4 (pH7). Kesimpulannya, keputusan kajian menunjukkan bahan semikonduktor yang dirawat dengan sinar gama berpotensi untuk meningkatkan fotoelektrokimia (PEC) pemisahan air.

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Irradiation effects on nanocrystalline materials

Cited by 41 publications

References 48 publications

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Peningkatan Kecekapan Pemisahan Air Menggunakan g-C3N4 yang Disinar Gama

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