Irradiation of Bypass Diodes up to 2.2E14 Neutron/cm$^{2}$ and 1.3 kGy for the FAIR Project

Floch, E.; Мустафин, Е. С.; Moritz, G.; Ramakers, H.; Голубев, А. А.; Borovlev, S.P.; Rogov, V. I.; Smirnov, G. N.; Titarenko, Yu. E.; Batyaev, V. F.; Канцырев, А. В.; Markov, N. V.; Smolyakov, A.; Hagedorn, D.; Gharib, A.

doi:10.1109/tasc.2007.897854

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“…Extensive studies have been performed, exposing these diodes to Φ D ¼ 2 kGy and Φ neq ¼ 3 × 10 13 cm −2 [7] and evaluating the behavior under the influence of radiation, at cryogenic temperatures. The same type of diode had later been qualified for the FAIR project, to Φ D ¼ 1.2 kGy and Φ neq ¼ 2.2 × 10 14 [8]. However, the irradiation was performed at 77 K and some of the tested diodes were warmed up to room temperature after each irradiation step.…”

Section: A Radiation Tolerance Of Lhc Type Diodesmentioning

confidence: 99%

Characterization of the radiation tolerance of cryogenic diodes for the High Luminosity LHC inner triplet circuit

Will

D'Angelo

Denz

et al. 2020

Phys. Rev. Accel. Beams

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Cryogenic bypass diodes are part of the baseline powering layout for the circuits of the new Nb 3 Sn based final focus magnets of the high luminosity Large Hadron Collider. They will protect the magnets against excessive transient voltages during a nonuniform quenching process. The diodes are located inside an extension to the magnet cryostat, operated in superfluid helium and exposed to ionizing radiation. Therefore, the radiation tolerance of different types of diodes has been tested at cryogenic temperatures in CERN's CHARM irradiation test facility during its 2018 run. The forward bias characteristics, the turn-on voltage and the reverse blocking voltage of each diode were measured weekly at 4.2 K and 77 K, as a function of the accumulated radiation dose. The diodes were submitted to a total dose close to 12 kGy and a 1 MeV neutron equivalent fluence of 2.2 × 10 14 cm −2. After the end of the irradiation program the annealing behavior of the diodes was tested by increasing the temperature slowly to 293 K. This paper describes the experimental setup, the measurement procedure and the analysis of the measurements performed during the irradiation program as well as the results of the annealing study.

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Section: A Radiation Tolerance Of Lhc Type Diodesmentioning

confidence: 99%