Irradiation plus annealing‐induced 1.20 eV emission band in p‐type GaAs

Abstract

The effect of 2.2 MeV electron irradiation and subsequent annealings on the luminescence of tellurium-compensated p-type GaAs crystals is studied and analyzed. AeGembI He TomKO B MbmbmoBot, HO M rammeBoit nonperneTKe apceHaAa r a n m a ; qecme xapamepncTmni C O~A~H H~I X PTB 1,20 eV ~a n y s a~~u~x UeHTpoB (nap

Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

“…In the assumption that N S does not exceed 6  10 16 cm À3 (the maximal impurity concentration is 4  10 16 cm À3 and concentration of defects EL2 is 2  10 16 cm À3 [5]), one can obtain r ¼ 6 nm. Such parameters of tails of state do not provide a condition of carrier localization _ 2 /(2m à e;h r 2 )og [14], where _ is the Planck constant, m à e;h is the effective mass of an electron or a hole.…”

“…This band is connected with participation of C As and Si Ga centers in radiative transitions [5] and will not be taken in consideration. In Fig.…”

“…Earlier [5] some characteristic properties of near band-edge (NBE) photoluminescence (PL) of semi-insulating undoped (SIU) GaAs crystals have been investigated at low levels of excitation (Lp10 21 quantum/(cm 2 s)). The unit quantum/(cm 2 s) represents the intensity of excitation and means the number of quanta of laser exciting radiation per 1 cm 2 per 1 s. In [6,7], we gave the results of investigations of behavior of near band-edge photoluminescence and conditions of appearing of electron-hole pairs in SIU GaAs crystals at different levels of excitation.…”

Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs

“…Much attention has been paid to the study of the effect of irradiation with high-energy particles (in particular, fast neutrons) and the following annealing on the GaAs photoluminescence (PL) as the data obtained give some information on the gallium arsenide electrical properties (see, for example, CARRIDO et al; CARLONE, BARNIER; DLUBEK et al;, 1987 MANASHEN, MUDARE; REUTESCH, FREIDLAND; SA-TOH et al and references therein). The present paper also deals with the irradiation effects on the GaAs PL.…”

“…As expected:(a) the copper diffusion leads to a generation of the copper-related emission band peaked at hv, = 1.01 eV [no Curelated emission band is observed in annealed copper-uncoated crystals and in the GaAs interior outside the penetration depth of Cu atoms; copper diffusion effects little the intensity of the intrinsic emission band because at low N,values used the common grown.-in defects were the dominant recombination centers] (for details see GLINCHUK et al, 1973);(b) the intrinsic emissison intensity was nearly the same in unirradiated and irradiated annealed Cu-coated samples [at high annealing temperatures most of radiationinduced defects are annealed (GLINCHUK et al, 1986GLINCHUK et al, , 1987DLUBEK et al)]. …”