IrSi Schottky barrier diodes for infrared detection

Pellegrini, P.W.; Golubović, A.; Ludington, C. E.; Weeks, Melanie M.

doi:10.1109/iedm.1982.190239

Cited by 16 publications

(1 citation statement)

References 3 publications

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“…However, Metal-SiGe reaction is obviously more complex compared to that of metal-Si or metal-Ge reaction as it results in a ternary phase. For example, reactions involving Pt and SiGe have reported Ge segregation and preferential PtSi formation [1,2], this would result in various values of barrier height from the same Pt-SiGe reaction depending on the amount of Ge segregation due to different processing conditions. In view of this, it would be useful to know if effective barrier height can be varied by controlling the concentration of dopants on the SiGe surface [3,4].…”

Section: Introductionmentioning

confidence: 99%

Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

2008

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In this paper, we demonstrate Schottky barrier height adjustment of Nickel-Germanosilicide (NiSiGe) contact on Si 0.7 Ge 0.3 by controlling the As + implants at the NiSiGe/Si 0.7 Ge 0.3 interface. Various dosage of As + was implanted into both n-and p-type Si 0.7 Ge 0.3 to demonstrate the control of effective barrier height. Electrical characterization shows ohmic contact can be achieved for NiSiGe on n-Si 0.7 Ge 0.3 . We use 2-D XRD to confirm presence of NiSiGe phase and TOF-SIMS to confirm the segregation of As + doping at the contact-semiconductor interface.

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Section: Introductionmentioning

confidence: 99%

Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

2008

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Low‐temperature characteristics of buried channel charge‐coupled devices

Kimata

Denda

Yutani

et al. 1986

Electron Comm Jpn Pt II

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This paper aims at the improvement of the characteristics of the buried‐channel charge‐coupled device (BCCD), which is used in such low‐temperature operation as the infrared image sensor. The measurement and analysis are performed for the transfer loss of BCCD below 100°K. The transfer loss in this temperature region is dominated by the carrier freeze‐out to the impurity level composing the n‐well of the buried‐channel. The loss in this temperature region depends on the period and the fall‐time of the driving clock. The dependence of the loss on the driving condition can be accounted for by the model in which two time‐constants exist for the emission from the trap. The reason for the different emission time‐constants from a trap depending on time is that the fringing field in the channel depends on time. When a large fringing field exists, the effective barrier of the trap is lowered by the Poole‐Frenkel effect, thereby decreasing the emission time‐constant. To reduce the transfer loss in this temperature region, there are several methods, such as utilization of impurity with shallow donor level in the n‐well of the buried‐channel, reduction of the impurity concentration, and increase of the fringing field.

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Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals

Pellegrini

Jimenez

1997

Thin Films

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IrSi Schottky barrier diodes for infrared detection

Cited by 16 publications

References 3 publications

Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts

Low‐temperature characteristics of buried channel charge‐coupled devices

Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals

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