Platinum silicide Schottky barrier infrared diodes have been formed on p-type silicon substrates having both 〈100〉 and 〈111〉 orientations. The potential barrier to optically generated hot carriers has been measured and found to be 0.219 eV for 〈100〉 substrates and 0.313 eV for 〈111〉. Platinum-layer thickness was varied from 1 to 10 nm. The nearly 0.1 eV difference in Schottky barrier potential appears to depend only on the orientation of the silicon substrates.

Factor important in attaining higher n‐type conductivity on implanting normalGaAs have been investigated. These are reflected in a comparison of Group IV and VI dopants where the difference in behavior can be ascribed to the different sublattice occupation. The importance of Ga outdiffusion with SiO2 encapsulated layers is seen on incorporating Ga within the oxide prior to initiating any heat‐treatment. For sulfur, the electrical activity is doubled by the presence of the oxide gallium. Such an oxide is detrimental for implanted Si+layers and indicates that some Ga outdiffusion is desirable. Presumably the same applies and inadvertently occurs with the traditionally simpler p‐type implants. The annealing of S+ and Se+ implants with a dose‐dependent, optimum annealing temperature differs significantly from Si+ which requires higher annealing for comparable doping. The advantage gained by implanting Group VI dopants at elevated temperatures is not as pronounced with Si and in this respect Si resembles the p‐type dopant Zn which does not exhibit any strong dependence on implantation temperature.

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