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Platinum silicide Schottky barrier infrared diodes have been formed on p-type silicon substrates having both 〈100〉 and 〈111〉 orientations. The potential barrier to optically generated hot carriers has been measured and found to be 0.219 eV for 〈100〉 substrates and 0.313 eV for 〈111〉. Platinum-layer thickness was varied from 1 to 10 nm. The nearly 0.1 eV difference in Schottky barrier potential appears to depend only on the orientation of the silicon substrates.

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Ge x Si 1−x / Si heterojunction internal photoemission (HIP) detectors with thresholds in the medium-wave infrared and long-wave infrared (LWIR) regions were fabricated and characterized. Measurements of the photoresponse are fit well by a theory which takes into account the scattering of excited carriers. The probability of escape of an excited hole is calculated and compared with that observed in another detector, the multiple quantum well structure. It is shown that HIP detectors can achieve background-limited performance in the LWIR region when operated at 40 K.

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