&lt;title&gt;New 6.5 µm Photodiodes For Schottky Barrier Array Applications&lt;/title&gt;

Pellegrini, P.W.; Weeks, Melanie M.; Ludington, C. E.

doi:10.1117/12.932797

Cited by 6 publications

(3 citation statements)

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“…The main precaution which must be taken with this technique is to assure that the implanted layer is of high enough concentration to cause barrier lowering, but is not so high as to cause the depletion layer to breakdown. The results reported in ( 12 ) showed that the effective barrier height is reduced from 270 mV to 220 mV corresponding to an extension of the photoresponse cut-off from 4.6un to 5.6vm.…”

Section: The Future Of Schottky Technologymentioning

confidence: 87%

“…The results reported ín (12) showed that the effective barrier height is reduced from 270 mV to 220 mV corresponding to an extension of the photoresponse cut -off from 4.61n to 5.6 um.…”

Section: Recent Advances In Schottky Technologymentioning

confidence: 92%

“…Barrier lowering to extend the Schottky barrier photoresponse cut -off has been reported (12). The technique used was to implant a shallow layer of thallium ions into the diode depletion region.…”

Section: Recent Advances In Schottky Technologymentioning

confidence: 99%

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<title>The Evolution Of Metal Silicide Schottky Barrier Infrared Focal Plane Detectors</title>

Pellegrini

Shepherd

1983

Technical Issues in Infrared Detectors and Arrays

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Schottky barrier infrared detectors have made significant advances in the past several years. These have occurred on many fronts, and have resulted in focal planes which can image in the staring mode with more than 8000 active elements. Initial experimental results of the early 1970's were done with Palladium Silicide detectors.Images made from this material have a cutoff wavelength of about 3.5 micrometers and can adequately cover the near infrared bands with moderate quantum efficiency.In the mid to late 1970's, it was found that PtSi could be formed into infrared sensing arrays with a cutoff wavelength of about 4.7 micrometers. Unfortunately, the early arrays did not cover the region from 4.7 to 5.2 micrometers and suffered from rather low quantum efficiencies. Improvements in processing have overcome both of these initial difficiencies.In fact, PtSi arrays now have cutoff wavelengths of nearly 6.0 micrometers and moderate quantum efficiencies from 3.0 to 5.0 micrometers.They have been measured to be background limited at f/3 and have fixed pattern fingerprints of less than 0.3 %.The minimum resolvable temperature at f/3 is less than 0.3 °C.Our latest experiments have concentrated in IrSi detectors.These devices have cutoff wavelengths beyond 9.0 micrometers, and have excellent quantum yields in the 3.0 to 5.0 micrometer region.

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Section: The Future Of Schottky Technologymentioning

confidence: 87%

“…The results reported ín (12) showed that the effective barrier height is reduced from 270 mV to 220 mV corresponding to an extension of the photoresponse cut -off from 4.61n to 5.6 um.…”

Section: Recent Advances In Schottky Technologymentioning

confidence: 92%