Metal Silicide Schottky Infrared Detector Arrays

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

“…As already discussed, the most popular Schottky-barrier detector is the PtSi detector, which can be used for the detection in the 3-5 µm spectral range (Kimata & Tsubouchi, 1995;Kimata, 2000). Radiation is transmitted through the p-type silicon and is absorbed in the metal PtSi (not in the semiconductor), producing hot holes, which are then emitted over the potential barrier into the silicon, leaving the silicide charged negatively.…”

Infrared detectors: an overview

“…The most popular Schottky-barrier detector is the PtSi detector which can be used for the detection in the 3-5 lm spectral range [30,31]. Radiation is transmitted through the p-type silicon and is absorbed in the metal PtSi (not in the semiconductor), producing hot holes which are then emitted over the potential barrier into the silicon, leaving the silicide charged negatively.…”

“…Using a 1.2 lm charge sweep device technology, a large fill factor of 71% was achieved with a 26 Â 20 lm 2 pixel in the 512 Â 512 monolithic structure [31]. The noise equivalent temperature difference (NETD) was estimated as 0.033 K with f =1:2 optics at 300 K. The 1040 Â 1040 element CSD FPA has the smallest pixel size (17 Â 17 lm 2 ) among 2D IR FPAs.…”

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

“…3 Presently, a format of these FPAs has reached 2 megapixels; 4 their noise equivalent temperature difference (NETD) has made 60 mK at the frame rate of 15 Hz and the f-number of 1 that is a very good sensitivity for large-format uncooled FPAs. A SOI-diode VGA FPA with NETD of 21 mK (f/1, 30 Hz) and an uncooled infrared micro-camera with the same parameters have also been recently demonstrated.…”