Effectively inverting the sign of material parameters is a striking possibility arising from the concept of metamaterials. Here, we show that the electrical properties of a p-type semiconductor can be mimicked by a metamaterial solely made of an n-type semiconductor. By fabricating and characterizing threedimensional simple-cubic microlattices composed of interlocked hollow semiconducting tori, we demonstrate that sign and magnitude of the effective metamaterial Hall coefficient can be adjusted via a tori separation parameter-in agreement with previous theoretical and numerical predictions.