We report on the uptake of deuterium by thin-film Mo/Si multilayer samples as a result of exposure to fluxes of predominantly thermal atomic and molecular species, but also containing a small fraction of energetic (800-1000 eV) ions. These exposures result in blister formation characterized by layer detachment occurring exclusively in the vicinity of the Mo-on-Si interfaces.This localization is attributed to strained centres introduced within the interfacial region during silicide formation and subsequent Mo crystallization. The correlation between D-content and blistering was studied. After an initial uptake period the D-content stabilized at ~1.3×10 vacancies within the layer as a consequence of its polycrystalline structure and its highlyconstrained state.