2004 IEEE Region 10 Conference TENCON 2004. 2004
DOI: 10.1109/tencon.2004.1415019
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ISFET pH sensor characterization: towards biosensor microchip application

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Cited by 20 publications
(14 citation statements)
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“…On average, the reference voltage experiences a shift of about 64 mV/pH being very close to the Nernst limit of 59 mV/pH . In general, for Al 2 O 3 as sensing surface a voltage shift close to the Nernst limit was expected as shown elsewhere .…”
Section: Resultssupporting
confidence: 75%
“…On average, the reference voltage experiences a shift of about 64 mV/pH being very close to the Nernst limit of 59 mV/pH . In general, for Al 2 O 3 as sensing surface a voltage shift close to the Nernst limit was expected as shown elsewhere .…”
Section: Resultssupporting
confidence: 75%
“…A c c e p t e d M a n u s c r i p t Table 3 shows a comprehensive comparison of temperature characteristics of various pH sensing materials. Note that the response of other metal-oxide-based pH sensor at higher temperatures has also been investigated [25][26][27][28][29][30][31][32][33][34][35]. Table 3 shows the performance of the sensor for temperatures up to 65 °C.…”
Section: Sensitivitymentioning
confidence: 99%
“…Thus, by measuring the channel current or the gate potential, we can represent the pH level of solution. The advantage of ISFET as pH sensor are include fast response time, smaller in size and fabrication compatible [4]. However, the ISFET were found to have difficulties in differentiating the ions with similar charge type and number [2].…”
Section: Introductionmentioning
confidence: 99%