1998
DOI: 10.1103/physrevlett.81.633
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Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces

Abstract: The initial stages of homoepitaxy on GaAs(001) are studied with atomic-resolution scanning tunneling microscopy and Monte Carlo simulations that include the zinc blende structure of GaAs, the (2 3 4) reconstruction of the (001) surface, and the kinetics of As 2 incorporation. The reconstruction is found to favor nucleation on the top-layer arsenic dimers and to cause small islands to be unstable until they adopt the local (2 3 4) structure. [S0031-9007(98)06564-8] 02.70.Lq, 61.16.Ch, 68.35.Fx Heterostructu… Show more

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Cited by 149 publications
(110 citation statements)
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“…1) has been generally established [4,5]. For the much-studied case of GaAs, the extensive experimental and theoretical knowledge accumulated about the surface structure has led to significant progress in understanding the atomistic mechanisms of growth during molecular beam epitaxy (MBE) [6,7]. In contrast, the III-Sb device surfaces are poorly understood, despite their demonstrated potential for a variety of advanced electronic and optoelectronic applications [8].…”
mentioning
confidence: 99%
“…1) has been generally established [4,5]. For the much-studied case of GaAs, the extensive experimental and theoretical knowledge accumulated about the surface structure has led to significant progress in understanding the atomistic mechanisms of growth during molecular beam epitaxy (MBE) [6,7]. In contrast, the III-Sb device surfaces are poorly understood, despite their demonstrated potential for a variety of advanced electronic and optoelectronic applications [8].…”
mentioning
confidence: 99%
“…In contrast, the atomistic growth model of Itoh and co-workers (Ref. [14], for a detailed description of this model see Ref. [16]) is based on parameters that are obtained by adjusting experimental and simulated island morphologies at a single growth temperature, 873 K. The information available from the DFT calculations motivated us to include several features in our simulations that were not considered previously: Most importantly, the incorporation of As 2 via an intermediate state where the arsenic molecule forms three bonds to the surface (rather than four) has not been considered before.…”
Section: Results Of the Simulationsmentioning
confidence: 93%
“…Both these two-component models restricted themselves to a simple cubic lattice. The aspect of surface reconstruction was not addressed until recently when Itoh et al [14] presented results of a more refined modeling including the interactions between surface As dimers, as well as the anisotropy of Ga diffusion on the reconstructed GaAs surface. Adopting suitable model parameters guided by experimental input from a detailed STM study, Itoh et al were able to simulate the morphology, the size and density of small islands in very good agreement with the experimental observations.…”
Section: Introductionmentioning
confidence: 99%
“…More importantly, we will consider weakly bound excess Te, which provides a reservoir of highly mobile atoms. A similar approach with weakly bound arsenic has recently been suggested by Itoh et al 19,20 in order to describe the growth on reconstructed GaAs(001) and InAs(001) surfaces.…”
Section: Introductionmentioning
confidence: 99%