Isoelectronic CdTe-doped ZnO thin films grown by PLD

Martín-Tovar, E A; Castro-Rodrı́guez, R.; Iribarren, A.

doi:10.1016/j.matlet.2014.10.068

Cited by 12 publications

(8 citation statements)

References 15 publications

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“…Therefore, it is possible to employ CdTe thin films to produce efficient solar cells with reduced recombination losses and improved short-circuit current density. A further benefit of thin films is that they can be synthesized by several physical and chemical methods, such as chemical bath deposition [ 10 ], spray pyrolysis [ 11 ], thermal evaporation [ 12 ], electrodeposition [ 13 , 14 ], sputtering [ 15 ], and pulsed laser ablation (PLD) [ 16 , 17 , 18 ]. The latter allows the in situ fabrication of solar cells with a precise control of the film width of about 0.2 nm, and can be scaled up for commercialization.…”

Section: Introductionmentioning

confidence: 99%

Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

Rangel-Cárdenas

Sobral

2017

Materials

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In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. The treated surface was prepared by laser ablation of a silicon wafer, forming holes in a periodic arrangement. Thin films were grown by pulsed laser ablation on silicon samples kept at 200 °C inside a vacuum chamber. The presence of CdTe was verified with X-ray diffraction and Raman spectroscopy indicating a nanocrystalline zinc blended structure. The optical absorption of thin films was calculated by using the Fresnel laws and the experimental reflectance spectrum. Results show that reflectance of 245 nm films deposited on modified substrates is reduced by up to a factor of two than the obtained on unchanged silicon and the optical absorption is 16% higher at ~456 nm. Additionally, it was determined that the band gap energy for planar and microstructured films is about 1.44 eV for both cases.

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Section: Introductionmentioning

confidence: 99%

Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

Rangel-Cárdenas

Sobral

2017

Materials

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“…It has a direct and wide band gap of 3.3eV in the near-UV spectral region [2], and a large exciton binding energy (60meV) at room temperature [3]. It consider that the ZnO is an n-type semiconducting with high density and good crystalline quality [4], but the use of ZnO as a semiconductor in electronic devices due to the high transmittance and good electrical conductivity [5]. Therefore, ZnO thin films are promising candidates for applications in short-wavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…It consider that the ZnO is an n-type semiconducting with high density and good crystalline quality [4], but the use of ZnO as a semiconductor in electronic devices due to the high transmittance and good electrical conductivity [5]. Therefore, ZnO thin films are promising candidates for applications in short-wavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [1][2][3][4][5][6]. Nanocrystalline ZnO thin films can be produced by several techniques such as reactive evaporation [7], molecular beam epitaxy (MBE), magnetron sputtering technique [8], pulsed laser deposition (PLD) [9], spray pyrolysis [10], sol-gel process [11], chemical vapor deposition, and electrochemical deposition [12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

Benramache

2019

Annals of West University of Timisoara - Physics

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We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.

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“…It has a direct and wide band gap of 3.3 eV in the near-UV spectral region [5], and a large exciton binding energy (60 meV) at room temperature [6]. Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8]. Therefore, ZnO thin films are promising candid-ates for applications in shortwavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Nanocrystalline ZnO thin films can be produced by several techniques such as reactive evaporation [11], molecular beam epitaxy (MBE), magnetron sputtering technique [12,13], pulsed laser deposition (PLD) [14], spray pyrolysis [15], sol-gel process [16], chemical vapor deposition, and electrochemical deposition [17].…”

Section: Introductionmentioning

confidence: 99%

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

Benramache¹,

Benhaoua²

2016

J. Nano- Electron. Phys.

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We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol-gel method used to fabricate ZnO thin film on glass substrate at different solution molarities of 0.1, 0.3 and 0.5 mol/l of zinc acetate dehydrate. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G  69.32 nm is measured wi 0.5 mol/l. The thin film exhibit an average optical transparency is over 80 % at high molarity, in the visible region, found that the optical band gap energy was increased up to 3.25 eV at 0.5 mol/l. The minimum value of Urbach energy of ZnO thin film was achieved with 0.5 mol/l.

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Isoelectronic CdTe-doped ZnO thin films grown by PLD

Cited by 12 publications

References 15 publications

Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

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