Isostructural Mott transition in 2D honeycomb antiferromagnet V0.9PS3

Coak, Matthew J.; Son, Sangyoung; Daisenberger, Dominik; Hamidov, Hayrullo; Haines, Charles R. S.; Alireza, Patricia; Wildes, A.; Liu, Cheng; Saxena, S. S.; Park, Je‐Geun

doi:10.1038/s41535-019-0178-8

Cited by 34 publications

(39 citation statements)

References 58 publications

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“…It facilitates the semiconductor-metal transition and leads to an enhancement of interlayer exchange interaction, the latter of which suggests the effective dimensionality of exchange interaction increases significantly. Similar increase in the effective dimensionality of transport behaviors is observed in V 0.9 PS 3 under high pressure [55]. The intriguing AFM to FM half-metallic transition could be in principle studied by refractive magnetic circular dichroism, magneto-optical Kerr effect microscopy, and transport measurement.…”

Section: Electronic Structures Under Different Pressures and Its Transupporting

confidence: 58%

“…These transition behaviors are distinctly different from extensively studied FePS 3 [43], where the Mott insulator-metal transition in FePS 3 happens between B-II and B-III phases. In contrast, the transition in CoPS 3 is isostructural in T-I phase, which is similar to V 0.9 PS 3 [55]. Based on the above analysis, this continuous transition among various magnetic states in CoPS 3 , from AFM semiconductor to FM half-metal and then to FM metal during the gradual pressurization process, should bring more possibilities to its applications.…”

Section: Electronic Structures Under Different Pressures and Its Tranmentioning

confidence: 67%

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Tunable magnetism in layered CoPS3 by pressure and carrier doping

Zhang

Zou

2020

Sci. China Mater.

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Despite extensive research on recently discovered layered ferromagnetic (FM) materials, their further development is hampered by the limited number of candidate materials with desired properties. As a much bigger family, layered antiferromagnetic (AFM) materials represent excellent platforms to not only deepen our understanding of fundamental physics but also push forward high-performance spintronics applications. Here, by systematic first-principles calculations, we demonstrate pressure and carrier doping control of magnetic properties in layered AFM CoPS 3 , a representative of transition metal phosphorus trichalcogenides. In particular, pressure can drive isostructural Mott transition, in sharp contrast to other transition metal thiophosphates. Intriguingly, both pressure and carrier doping can realize the long-sought FM half-metallic states with 100% spin polarization percentage, which is good for improving the injection and detection efficiency of spin currents among others. Moreover, the Mott transition is accompanied by instantaneous spincrossover (SCO) in CoPS 3 , and such cooperative SCO facilitates the implementation of fast-response reversible devices, such as data storage devices, optical displays and sensors. We further provide an in-depth analysis for the mechanisms of FM half-metallicity and SCO. Tunable magnetism in layered AFM materials opens vast opportunities for purposeful device design with various functionalities.

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Section: Electronic Structures Under Different Pressures and Its Transupporting

confidence: 58%

Section: Electronic Structures Under Different Pressures and Its Tranmentioning

confidence: 67%

Tunable magnetism in layered CoPS3 by pressure and carrier doping

Zhang

Zou

2020

Sci. China Mater.

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“…Thus, the existence of disconnected nickel regions in samples may only affect the absolute value of resistivity, but not gives rise to the intrinsic insulating behavior. In principle, high pressure can compress the cell volume and reduce the lattice parameters of compound, resulting in insulator-metal transitions and even superconductivity [40,41] . The clear suppression of insulating behavior in our high-pressure study may be induced by the modification of the bands, or the weakening of the correlation effect, which lead to an enhanced effective density of states at the Fermi energy.…”

Section: Discussionmentioning

confidence: 99%

Absence of superconductivity in bulk Nd1−xSrxNiO2

et al. 2020

Commun Mater

167

126

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Recently superconductivity at 9 -15 K was discovered in an infinite-layer nickelate (Nd0.8Sr0.2NiO2 films), which has received enormous attention.Since the Ni 1+ ionic state in NdNiO2 may have the 3d 9 outer-shell electronic orbit which resembles that of the cuprates, it is very curious to know whether superconductivity discovered here has similar mechanism as that in the cuprates. By using a three-step method, we successfully synthesize the bulk samples of Nd1-xSrxNiO2 (x = 0, 0.2, 0.4). The X-ray diffractions reveal that all the samples contain mainly the infinite layer phase of 112 with some amount of segregated Ni. This has also been well proved by the SEM image and the EDS composition analysis. The resistive measurements on the Sr doped samples show insulating behavior without the presence of superconductivity. Temperature dependence of the magnetic moment under high magnetic fields exhibits a Curie-Weiss law feature with the paramagnetic moment of about 2B/f.u.. By applying pressure on Nd0.8Sr0.2NiO2 up to about 50.2 GPa, we find that the strong insulating behavior at ambient pressure is significantly suppressed, but superconductivity has not been observed either. Since the lattice constants derived from our XRD data are very close to those of the reported superconducting films, we argue that the superconductivity in the reported film may not originate from the expected Nd0.8Sr0.2NiO2, but arise from the interface or the stress effect.Since the discovery of high critical temperature superconductivity (HTS) in cuprates in 1986 [1] , there are plenty of experimental and theoretical studies to explore the intrinsic mechanism for superconductivity [2][3][4][5] . There is a general agreement that the parent compound of cuprates like La2CuO4 is a Mott insulator with a charge transfer gap and long-range antiferromagnetic (AF) order [6] . With chemical doping, the long-range AF order will be suppressed at a hole doping level (p  0.02) and d-wave superconductivity emerges at a higher doping level (p  0.05) [7][8][9] . After the efforts more than three decades, some common features have been observed, although the intrinsic pairing mechanism of HTS remains unresolved yet. These include two-dimensional electronic structure and coexistence with an AF order or spin fluctuations, all these also occur in most iron-based [10] and heavy fermion superconductors [11] .Moreover, in cuprates, it is also important that the spin S = 1/2 magnetic moment from 3d 9 electrons form the basic structure of the AF order. One intuitive way to explore the pairing mechanism of cuprates is to find additional high-TC superconductors with different transition metals but similar crystal and

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“…Pressure or compressive strain might also be an alternative way to tune the properties of the 2D vdW magnets without introducing disorder or impurities to the system. It has been recently shown that pressure can be effectively used to modify the magnetic, electronic, and optical properties of 2D vdW magnets both in bulk and atomically thin samples [18][19][20][21][22][23][24][25][26][27][28][29] .…”

Section: Introductionmentioning

confidence: 99%

“…However, the high-pressure behavior of CrPS 4 remains unexplored to date. By comparison, high-pressure investigations on the closely related systems such as TMP(S, Se) 3 (TM = transition metal) in which the TM ions form a layered honeycomb lattice, have revealed Mott insulator-metal and structural transitions in MnPS 3 18 , FePS 3 20,25,27 , FePSe 3 25 , and recently Mott isostructural transition in V 0.9 PS 3 26 . In this work, we examine the effects of pressure on the optical, electronic, and vibrational properties of layered CrPS 4 through the use of optical absorption, photoluminescence, resistivity, and Raman spectroscopy measurements.…”

Section: Introductionmentioning

confidence: 99%

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Susilo¹,

Jang²,

Feng³

et al. 2020

npj Quantum Mater.

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Two-dimensional van der Waals (vdW) magnetic materials have emerged as possible candidates for future ultrathin spintronic devices, and finding a way to tune their physical properties is desirable for wider applications. Owing to the sensitivity and tunability of the physical properties to the variation of interatomic separations, this class of materials is attractive to explore under pressure. Here, we present the observation of direct to indirect band gap crossover and an insulator-metal transition in the vdW antiferromagnetic insulator CrPS 4 under pressure through in-situ photoluminescence, optical absorption, and resistivity measurements. Raman spectroscopy experiments revealed no changes in the spectral feature during the band gap crossover whereas the insulator-metal transition is possibly driven by the formation of the high-pressure crystal structure. Theoretical calculations suggest that the band gap crossover is driven by the shrinkage and rearrangement of the CrS 6 octahedra under pressure. Such high tunability under pressure demonstrates an interesting interplay between structural, optical and magnetic degrees of freedom in CrPS 4 , and provides further opportunity for the development of devices based on tunable properties of 2D vdW magnetic materials.

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Isostructural Mott transition in 2D honeycomb antiferromagnet V0.9PS3

Cited by 34 publications

References 58 publications

Tunable magnetism in layered CoPS3 by pressure and carrier doping

Tunable magnetism in layered CoPS3 by pressure and carrier doping

Absence of superconductivity in bulk Nd1−xSrxNiO2

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

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