Excitation of the H-Si bond on the Si͑100͒-͑2 3 1͒:H surface at 157 nm leads to the desorption of atomic hydrogen. Quantitative measurement using polarized light shows that the transition dipole moment is oriented at ϳ18 ± from the surface normal, in agreement with the H-Si bond direction. This result unambigously establishes the direct photodesorption mechanism. A comparison of the isotope effect in the photodesorption cross section with a time-dependent quantum mechanical simulation reveals an excited-state lifetime of ϳ0.4 fs. [S0031-9007 (99)08569-5] PACS numbers: 82.50.Fv, 82.65.My