ITO-free, efficient, and inverted phosphorescent organic light-emitting diodes using a WO 3 /Ag/WO 3 multilayer electrode

Liu, Shun‐Wei; Su, Tsung-Hao; Chang, Po-Chien; Yeh, Tzu‐Hung; Li, Ya‐Ze; Huang, Ling-Jie; Chen, Yuhui; Lin, Chun-Feng

doi:10.1016/j.orgel.2016.01.035

Cited by 38 publications

(11 citation statements)

References 25 publications

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“…Firstly, the root mean square (RMS) value of ITO film is very close to 2.84 nm measured in Ref. 28. It is known that a lot of nano-tips and nano-needles occur easily at the surface of ITO films on glass substrate to enhance the surface roughness, especially with none of heating process.…”

Section: -5supporting

confidence: 74%

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

2017

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ITO/Ag/ITO (IAI) trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM) reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

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Section: -5supporting

confidence: 74%

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

2017

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“…S1.). Similarly, to the pure ITO films [27], the smooth surface of IAI films could contribute to the good electrical properties and avoid optical haze effect. Character istics Bragg peak in GI XRD, contrast in SEM/compo mode and electron densities in XRR measurements all confirm that the silver is only present in its nanoparticle metallic form, i.e.…”

Section: Characterization Of the Iai Layermentioning

confidence: 99%

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Wang

Barnabé

Thimont

et al. 2019

Electrochimica Acta

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The "Oielectric/Metal/Oielectric" (OMO) stacked films being used as transparent and conductive (TC) electrodes, have demonstrated excellent application in the ElectroChromic (EC) process and devices. In this work, multilayers (IAI) made of 50 nm of Indium Tin Oxide (IT0)/5 nm of metallic sil ver (Ag)/30 nm of ITO that exhibit band gap, low resistance of 7.4 Q and the high figure of merit of 9.9 x 10 3 Q 1 were introduced in a complete five layer Glass/IAI/NiOx/LlCIO4 PC PMMA/WO3/IAI/Glass ElectroChromic De vice (ECO). The single IAI electrode as well as the two actives EC layers Glass/IAI/Niûx and Glass/IAI{WO 3 were firstly characterized for their TC and EC properties respectively. Then, the EC properties of the complete five layer ECO were analyzed. Fast response time (2.02 s for the bleaching and 225 s for complete coloration), wide optical modulation in the visible light region (-55% at 550 nm), long lifetime (more than 6000 s), large capacity and good stability as well as high coloration efficiency (31.7 cm 2 C 1) were obtained The improved EC performance of ECO were related to the good electrical and optical properties of IAI electrode.

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“…The luminance of the devices in dark is very low, which is estimated to be only ∼10 cd m –2 even at V GS = −60 V (Figure a). However, when under illumination (3.26 mW cm –2 ), the devices lit (∼2.3 cd m –2 ) at V GS as low as −10 V and the brightness increases rapidly with the negative increase of V GS , and reaches ∼250 cd m –2 at V GS = −60 V. The emission spectrum of the devices (Figure S5a) shows a main peak at 514 nm with a shoulder peak around 549 nm, demonstrating the EL emission comes from the emission layer of CBP:Ir(ppy) 3 . Photographs of a sample with and without the illumination are shown in Figure b.…”

Section: Resultsmentioning

confidence: 99%

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors

Zhang

et al. 2017

ACS Appl. Mater. Interfaces

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The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

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ITO-free, efficient, and inverted phosphorescent organic light-emitting diodes using a WO 3 /Ag/WO 3 multilayer electrode

Cited by 38 publications

References 25 publications

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors

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