Zeeman spectroscopy measurements on the sharp line structure observed in the absorption and photoluminescence spectrum of GaP:Ti around 0.61 eV are interpreted a s 2T2 w 2 E transitions of Ti3' ( d l ) . A related system of lines at 0.57 eV in GaAs:Ti is similarly interpreted.A recent paper (Ulrici el a1 1986) described the optical GaP:Ti:Zn sample (upper spectrum) are shown.In the and electrical properties of Ti in GaAs. Broad optical former spectrum the sharp peaks are superimposed upon absorption bands around 0.66 and 1.01 eV were ascribed what appears to be a broad bell-shaped absorption centred to internal transitions of the TiZ+ centre. In addition, very at around 0.606 eV. This is thought to be due to internal sharp line structure at 0.566 and 0.569 eV was observed in transitions of TiZ+. In the high-resistivity GaP:Ti:Zn absorption, with the line at 0.566 eV also observed in sample the Fermi level will presumably be lower down in photoluminescence (PL). These lines. which have also been the band gap away from the TiZ+/Ti3+ acceptor level so reported in GaAs:Ti by Hennel el a1 (1986). are only there will be no Ti present in the TiZ+ charge state. The observed in Ti-doped material and, indeed, the latter lines at 0.6041 and 0.6046 eV are also observed in PL. as authors ascribe them to internal transitions of Ti3+. In shown in inset (a) of the figure. Of these, the line at order to elucidate the electronic nature of the levels 0.6041 eV is the strongest in both PL and absorption. involved in the sharp line transitions, both Martini el U /