Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

“…The current transport mechanism of p-CuO@CuS/n-Si diode was explained by the Thermionic Emission (TE) theory [ 43 ]: n is Ideality factor, K B is Boltzmann constant, T is temperature in kelvin, R s is series resistance, I o is reverse saturation current and V is applied voltage. The reverse saturation current ( ) calculated from the following equation [ 44 ]. here A is area of contact and A* is the Richardson constant, zero bias barrier height.…”

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

“…The prepared WO 3 and Sn–WO 3 precursor solutions of 3 mL were deposited separately on the cleaned p-Si substrates (1 cm × 1 cm) by the jet nebulizer spray pyrolysis technique with different concentrations of Sn (0, 4, 8, and 12 wt.%) the copper (Cu) metal contact was coated on the Sn–WO 3 /p-Si using dc sputtering (Model Name: HIND high vacuum-PS 2000) with 4 mm diameter and 500 nm thickness. The instrument details and deposition conditions of the metal contacts were mentioned in their previous work [ 36 , 37 ]. The Sn-WO 3 /p-Si diode showed a positive light response of high reverse saturation current under illumination [ 38 ].…”

Position-Selective Growth of WO3 Nanosheets for NH3 Gas Sensors

“…The WO 3 microstructures grown by maintaining the temperature at 950 °C and increasing the oxygen concentration (Figure c) exhibit an upward shift in the voltage as the temperature increases, which could be due to Joule heating. Interestingly, the increase in current flow with an increase in temperature is not maintained for samples grown at low oxygen concentrations, while for samples grown at high oxygen concentrations, the microstructures follow the conventional route . This may be due to the grain distribution, wherein low-oxygen-concentration growth results in large grains with less grain boundaries, leading to reduced traps for charge transport.…”

“…Interestingly, the increase in current flow with an increase in temperature is not maintained for samples grown at low oxygen concentrations, while for samples grown at high oxygen concentrations, the microstructures follow the conventional route. 30 This may be due to the grain distribution, wherein low-oxygen-concentration growth results in large grains with less grain boundaries, leading to reduced traps for charge transport. High-oxygenconcentration growth is accompanied by more grain boundaries and poorly connected microstructures, which can reduce the current flow.…”