Sintering behaviors and microstructural characteristics of La(Co 1=2 Ti 1=2 )O 3 ceramics were investigated. The La(Co 1=2 Ti 1=2 )O 3 ceramics were prepared by the conventional solid-state route. Doping with B 2 O 3 (up to 0.75 wt %) can effectively promote the densification of La(Co 1=2 Ti 1=2 )O 3 ceramics at a low sintering temperature. With B 2 O 3 addition, the sintering temperature of La(Co 1=2 Ti 1=2 )O 3 can be effectively reduced from 1440 to 1230 -1350 C. At 1350 C/6 h, La(Co 1=2 Ti 1=2 )O 3 ceramic with 0.25 wt % B 2 O 3 addition possesses a dielectric constant (" r ) of 30, a Q Â f value of 64,600 GHz (at 8 GHz) and a temperature coefficient of resonant frequency ( f ) of À48 ppm/ C. The B 2 O 3 -doped La(Co 1=2 Ti 1=2 )O 3 ceramic is applicable in microwave devices requiring low sintering temperature.