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Hong, Seong Hyeon; Horn, Jeffrey A.; Trolier-McKinstry, Susan; Messing, Gary L.

doi:10.1023/a:1006722312423

Cited by 54 publications

(21 citation statements)

References 5 publications

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“…These peaks are assigned [25] to vibrations of O-Ti-O. The Raman mode located at 230 cm −1 is Raman-inactive, according to the symmetry rules of the octahedron TiO 6 . However, it is observed that due to the distortion of the octahedron, the mode at 333 cm −1 is a combination of vibration modes, being stretching and bending modes.…”

Section: X-ray Diffraction For the Pure Bit Andmentioning

confidence: 99%

“…The tuning of specific electric properties by compositional modification, as well as the grain size effect, could lead to modifications in the Curie temperature, conductivity, coercivity, compliance, etc. [5,6]. Dielectric properties of BIT ceramics are highly dependent upon the grain size, the phase content in the ceramic body and the sintering temperature.…”

Section: Introductionmentioning

confidence: 99%

“…In order to avoid this problem, it is necessary to lower the calcination temperature. The methods reported in the literature to prepare BIT include co-precipitation [5][6][7] and molten salt synthesis [8]. Wet-chemistry-methods usually involve chemicals (especially its muth salts), which are sensitive to light and other factors.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of Bi4Ti3O12 (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Pinheiro¹,

Saraiva²,

Filho³

et al. 2013

MSA

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We prepared the Nano-sized bismuth titanate Bi 4 Ti 3 O 12 (BIT) powders, through a high-energy ball milling process from their oxides Bi 2 O 3 and TiO 2 . This BIT phase can be formed after a milling process for 40 min. With an increasing milling time, this particle size of mixture is gradually reduced, thus, we have mostly an amorphous phase. The BIT ceramics were duly obtained by sintering the synthesized powders at temperatures ranging from 850˚C to 1000˚C. The BIT ceramics sintered at 1020˚C for 1 h, exhibiting a density with 7.52 g/cm 3 of a crystaline phase and a dielectric of K = 288.11 (100 Hz), as well as a dielectric loss of 0.05 (100 kHz). The High-energy ball milling process is a promising way to prepare BIT ceramics. After the preparation of the BIT, we doped it with the Multi-Walled Carbon Nanotubes which are properly obtained by a chemical vapour deposition (CVD), using nickel as a catalyst, as well as using acetilene at 720˚C, and then proceeded with the dielectric and optical measurements.

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Section: X-ray Diffraction For the Pure Bit Andmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Preparation of Bi4Ti3O12 (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Pinheiro¹,

Saraiva²,

Filho³

et al. 2013

MSA

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“…This evidences that the decrease in the particle size and the number of platelet-like particle could enhance the density of modified-BIT ceramics, which would contribute to the enhancement of the functional properties. 29),30) Figure 10 presents the composition dependence of dielectric permittivity (¾) and the dissipation factor (tan ¤) of BIT and BPT ceramics. BIT ceramic exhibited the ¾ of about 258.…”

Section: Fabrication Of Bit and Bpt Ceramicsmentioning

confidence: 99%

Fuel-free low-temperature self-combustion synthesis and characterization of praseodymium-substituted bismuth titanate ceramics

Krengvirat

Sreekantan

Noor

et al. 2012

J. Ceram. Soc. Japan

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This paper presents the preparation of bismuth titanate (Bi 4 Ti 3 O 12 ; BIT) and praseodymium-substituted bismuth titanate (Bi 4¹x Pr x Ti 3 O 12 : BPT) with various molarities of praseodymium ion (Pr 3+ : x = 0.2, 0.6 and 1.0) via a fuel-free low-temperature self-combustion synthesis process (FLSC). FLSC offers a remarkable ability to produce polycrystalline BIT powder with an orthorhombic structure, and BPT powder with a tetragonal structure. The substitution of Pr 3+ into the BIT system retarded the crystal growth, as revealed by the decrease in the crystallite size from 106 to 41 nm by incorporating Pr 3+ with x = 1.0. Besides, the substitution caused the structure transformation from platelet-like structure to aquiaxed structure. Such structure provides an essential role to enhance the ceramic density. High relative density of about 99.3% was achieved for the BPT ceramic compared to BIT ceramic with a relative density of 89.7%. The results underline the possibility to control the anisotropic grain growth of BIT ceramic by incorporating Pr 3+ into the BIT system through FLSC. The ceramic sintered at 1100°C exhibited high dielectric permittivity (269.38) with a low dissipation factor as low as 0.00203.

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“…Most of them have centered in modified Bi 4 Ti 3 O 12 ͑n =3͒. [13][14][15] Others have studied systems with n = 2, as SrBi 2 Ta 2 O 9 . 16 However, the dielectric properties of BTN ceramics have been scarcely studied 17,18 and its relation with microstructure in the full temperature interval up to the ferroparaelectric phase transition has not yet been accomplished, mainly due to its high conductivity at those temperatures.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and texture dependence of the dielectric anomalies and dc conductivity of Bi3TiNbO9 ferroelectric ceramics

Moure¹,

Pardo²

2005

Journal of Applied Physics

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Ceramics of composition Bi 3 TiNbO 9 ͑BTN͒ and perovskite-layered structure ͑Aurivillius type͒ ͓B. Aurivillius, Ark. Kemi 1, 463 ͑1949͔͒ were processed by natural sintering and hot pressing from amorphous precursors. Precursors were obtained by mechanochemical activation of stoichiometric mixtures of oxides. These materials are in general interesting for their use as high-temperature piezoelectrics. Among them, BTN possesses the highest ferroparaelectric phase-transition temperature ͑Ͼ900°C͒. The transition temperature establishes the working limit of the ceramic and the electric properties, especially the dc conductivity, affect on its polarizability. In this work, dielectric studies of BTN ceramics with controlled texture and microstructure have been made at 1, 100 KHz, and 1 MHZ and in the temperature range from 200°C up to the ferroparaelectric transition temperature. Values of Јϳ 250 at 200°C are achieved in ceramics hot pressed at temperatures as low as 700°C for 1 h.

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Cited by 54 publications

References 5 publications

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Fuel-free low-temperature self-combustion synthesis and characterization of praseodymium-substituted bismuth titanate ceramics

Microstructure and texture dependence of the dielectric anomalies and dc conductivity of Bi3TiNbO9 ferroelectric ceramics

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Untitled

Cited by 54 publications

References 5 publications

Preparation of Bi&lt;sub&gt;4&lt;/sub&gt;Ti&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi&lt;sub&gt;4&lt;/sub&gt;Ti&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Fuel-free low-temperature self-combustion synthesis and characterization of praseodymium-substituted bismuth titanate ceramics

Microstructure and texture dependence of the dielectric anomalies and dc conductivity of Bi3TiNbO9 ferroelectric ceramics

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Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)