2002
DOI: 10.1023/a:1014964701803
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Cited by 22 publications
(10 citation statements)
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“…Campos et al [39] and Tsakiris et al [40] reported that the boron can be incorporated into the SiC via solid solution or can also persist as dispersed phase, and the B 4 C detection limit of XRD is ∼5 wt%. With increasing sintering temperature, the transition from 6H to 4H was observed in both the samples sintered by SPS and conventional sintering, which was also observed in the previous study reported by Yoshimura et al [41], who reported that 6H polytype of SiC tends to transform to 4H polytype with increasing sintering temperature in 0.4 wt% B 4 C and 1.8 wt% C-added SiC. Rietveld analysis was used for the quantitative phase analysis of the SPS and CS samples, and the results are shown in table 1.…”
Section: Methodssupporting
confidence: 87%
“…Campos et al [39] and Tsakiris et al [40] reported that the boron can be incorporated into the SiC via solid solution or can also persist as dispersed phase, and the B 4 C detection limit of XRD is ∼5 wt%. With increasing sintering temperature, the transition from 6H to 4H was observed in both the samples sintered by SPS and conventional sintering, which was also observed in the previous study reported by Yoshimura et al [41], who reported that 6H polytype of SiC tends to transform to 4H polytype with increasing sintering temperature in 0.4 wt% B 4 C and 1.8 wt% C-added SiC. Rietveld analysis was used for the quantitative phase analysis of the SPS and CS samples, and the results are shown in table 1.…”
Section: Methodssupporting
confidence: 87%
“…2) não está associada com este fenômeno. Uma possível explicação é a ocorrência de crescimento e coalescimento de poros em altas temperaturas, que leva à diminuição da pressão interna dos gases (pelo aumento do raio do poro) e, como conseqüência, resulta em expansão do volume dos gases e dos poros, o que causa a diminuição da densidade [24,25]. A pressão interna dos gases aprisionados nos poros fechados (principalmente N 2 do ar) parece ter influência significativa, pois, em experiências realizadas em nosso laboratório, o pó utilizado pode ser sinterizado a 1850 °C sob vácuo ou em atmosfera de hidrogênio e resultar em corpos com significativa transmissão luminosa, i.e., com baixa porosidade.…”
Section: Resultsunclassified
“…It is known that the transformation of b-SiC into a-phase seems to generate many defects, such as stacking faults, which cause the SiC grain to elongate. 18 In our experimental data, we observed the elongation of the SiC grain while phase transition occurred from b-to a-phase at temperatures above 2100uC. Figure 10 shows relative density of SiC sintered bodies using b-SiC powder derived from alkoxide precursor.…”
Section: Resultsmentioning
confidence: 61%