Jot devices and the Quanta Image Sensor

Ma, Jiaju; Hondongwa, Donald; Fossum, Eric R.

doi:10.1109/iedm.2014.7047021

Cited by 10 publications

(4 citation statements)

References 5 publications

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“…By nearlossless transfer of the photogenerated charges from a large area absorbing region to a small-volume collection and multiplication region, charge compression has shown the potential to overcome this intrinsic limitation, enabling a disruptive advancement of the state of the art of photodetectors. Furthermore, this hybrid integrated architecture allows for enhanced area fill factor, high pixel density, increased full-well capacity and high conversion gain [111].…”

Section: Charge Compression Devicesmentioning

confidence: 99%

Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity

Bianconi

Mohseni

2020

Rep. Prog. Phys.

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BackgroundObservation of infrared radiation has historically been one of the most prominent ways to better understand different phenomena in our Universe. Infrared imaging however, has seen massive growth in number of applications during the past few decades. This rapid growth has fueled exciting technological developments that could spur new paradigm-shifting advancements in infrared detection and the numerous fields related to it. This review intends to focus on the most important recent progresses in the field. However, in light of recent controversies in proper measurement and formulation of photon

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Section: Charge Compression Devicesmentioning

confidence: 99%

Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity

Bianconi

Mohseni

2020

Rep. Prog. Phys.

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“…Single-photon avalanche diode (SPAD) pixels have been developed for time-of-flight (ToF) range image sensors [1][2][3][4][5]. In addition, photon-counting imaging has been proposed as a promising technology for image acquisition with noiseless readout and high dynamic range (HDR) [6][7][8][9]. A SPAD image sensor with full digital readout is well-matched with the photon-counting architecture for global shutter image capture with noiseless readout and HDR by shrinking the SPAD pixel size and stacking a logic chip with pixel-parallel Cu-Cu connections [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting

Ogi,

Sano,

Nakata

et al. 2023

Sensors

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In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized potential design. The embedded metal for the contact is also used as an optical shield and a low crosstalk probability of 0.4% is achieved, while the photon detection efficiency is as high as 57%. In addition, the integration of a power grid and the polysilicon resistor on SPAD pixels can help to reduce the voltage drop in anode power supply and reduce the power consumption with SPAD multiplication, respectively, in a large SPAD pixel array for a high-resolution photon-counting image sensor.

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“…This can be achieved thanks to electron multiplication in EMCCD [2]. Although a new kind of high performance low-light-level image sensor has been developed thanks to the advent of the quanta image sensor [3], EMCCDs are still wanted for particular applications such as time delay integration for earth observations.…”

Section: Introductionmentioning

confidence: 99%

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Marcelot,

Morvan,

Salih Alj

et al. 2023

Sensors

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This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology. The CDTI transfer register offers a charge transfer inefficiency lower than 10−4 and a low dark current o 0.11nA/cm2 at room temperature. In this work, the timing diagram is adapted to use this CDTI transfer register in an electron multiplication mode. The results highlight some limitations of this device in such an EM configuration: for instance, an unexpected increase in the dark current is observed. A design modification is then proposed to overcome these limitations and rely on the addition of an electrode on the top of the register. Thus, this new device preserves the good transfer performance of the register while adding an electron multiplication function. Technology computer-aided design (TCAD) simulations in 2D and 3D are performed with this new design and reveal a very promising structure.

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Jot devices and the Quanta Image Sensor

Cited by 10 publications

References 5 publications

Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity

Recent advances in infrared imagers: toward thermodynamic and quantum limits of photon sensitivity

A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

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