2011
DOI: 10.1088/0957-4484/22/31/315302
|View full text |Cite
|
Sign up to set email alerts
|

Junction fabrication by shadow evaporation without a suspended bridge

Abstract: We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by e-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in situ fabrication of junctions and capacitors without the use of the well-known suspended bridge (Dolan 1977 Appl. Phys. Lett. 31 337-9). The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 10(-2) µm(2) to more than 10(4) µm(2). We have … Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
69
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 94 publications
(71 citation statements)
references
References 30 publications
2
69
0
Order By: Relevance
“…Junctions and transmission lines are fabricated in the same fabrication step by shadow evaporation of aluminum on a silicon substrate. We use 100 keV electron beam lithography with an asymmetric undercut in the two-layer resist (PMMA/MAA, PMMA) to deposit all unwanted structures on the resist walls 21,22 . The sample parameters are summarized in Table I.…”
Section: Experiments a Samplementioning
confidence: 99%
“…Junctions and transmission lines are fabricated in the same fabrication step by shadow evaporation of aluminum on a silicon substrate. We use 100 keV electron beam lithography with an asymmetric undercut in the two-layer resist (PMMA/MAA, PMMA) to deposit all unwanted structures on the resist walls 21,22 . The sample parameters are summarized in Table I.…”
Section: Experiments a Samplementioning
confidence: 99%
“…1. We fabricated the junctions by e-beam lithography and double angle evaporation of aluminum using the bridge-free technique of [20,21]. Prior to aluminum deposition, the substrate is cleaned of resist residues using an oxygen plasma [22].…”
mentioning
confidence: 99%
“…The ratio =À up determines the fidelity of the ground state preparation and must therefore be much greater than 1. The measurements presented here were performed in a standard circuit QED setup on an aluminum transmon qubit, fabricated using a bridgeless double-angle evaporation technique [17,18], inside a three-dimensional copper cavity, thermally anchored to the mixing chamber of a dilution refrigerator with a base temperature of 17 mK. The cavity was mounted inside a copper shield coated with infraredabsorbing material on the inside.…”
mentioning
confidence: 99%