Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation

Choi, Ui-Min; Blaabjerg, Frede; Iannuzzo, Francesco; Jørgensen, Sabine

doi:10.1016/j.microrel.2015.06.146

Cited by 51 publications

(22 citation statements)

References 12 publications

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“…The measured V CE ON includes voltage drops on various interconnection elements such as bond-wires and it may cause a large temperature measurement error. This is because the I-V characterization of IGBT is performed under the homogeneous temperature distribution of power device modules, but power device modules have a nonhomogeneous temperature distribution during PC test and therefore, R int will make different voltage drops [77].…”

Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

“…2) Junction Temperature Estimation Method by V CE ON at High Current With Compensation [56], [77]: The compensation method for the effect of R int on temperature measurement has been proposed in [56] and [77]. By measuring the interconnection resistance under different temperatures using a fourpoint probing method as shown in Fig.…”

Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

“…29. Comparison of T j measured by the IR camera and T j est before and after the compensation in the AC power cycling test (f ou t = 3 Hz) [56], [77]. recharacterization points.…”

Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

“…Four-point probing method for the interconnection resistance measurement in an open module[56],[77].…”

mentioning

confidence: 99%

“…Measured parasitic package resistances of high-and low-side IGBTs in an open module as a function of temperature[56],[77].…”

mentioning

confidence: 99%

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Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Choi

Blaabjerg

Jørgensen

2018

IEEE Trans. Power Electron.

183

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Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector-emitter voltage (V C E O N ) and forward voltage (V F ) measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.Index Terms-Failure mechanism, insulated gate bipolar transistor (IGBT), power cycling (PC) test, power device module, reliability, wear-out failure.

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Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

“…29. Comparison of T j measured by the IR camera and T j est before and after the compensation in the AC power cycling test (f ou t = 3 Hz) [56], [77]. recharacterization points.…”

Section: ) Junction Temperature Estimation Methods By V Ce On Atmentioning

confidence: 99%

“…Four-point probing method for the interconnection resistance measurement in an open module[56],[77].…”

mentioning

confidence: 99%

“…Measured parasitic package resistances of high-and low-side IGBTs in an open module as a function of temperature[56],[77].…”

mentioning

confidence: 99%

See 3 more Smart Citations

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Choi

Blaabjerg

Jørgensen

2018

IEEE Trans. Power Electron.

183

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show abstract

Thermal Reliability Evaluation of IGBT for Aerospace Electromechanical Servo System

Wei

et al. 2022

Lecture Notes in Electrical Engineering

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A study on temperature monitoring method for inverter IGBT based on memory recurrent neural network

Liu,

Guo,

et al. 2024

High-speed Railway

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Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation

Cited by 51 publications

References 12 publications

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Thermal Reliability Evaluation of IGBT for Aerospace Electromechanical Servo System

A study on temperature monitoring method for inverter IGBT based on memory recurrent neural network

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