Junction Temperature Measurement of IGBTs Using Short Circuit Current as a Temperature Sensitive Electrical Parameter for Converter Prototype Evaluation

Xu, Zhuxian; Xu, Fan; Wang, Fei

doi:10.1109/tie.2014.2374575

Cited by 93 publications

(36 citation statements)

References 34 publications

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“…In the case of TSEP I sc , a bypass power device is introduced under test to produce the short current [16]. When these limited conditions for TSEP I sat and V f methods are reached in a deteriorated device, the power module is susceptible to catastrophic.…”

Section: Introductionmentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

IEEE Trans. Power Electron.

166

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Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

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Section: Introductionmentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

IEEE Trans. Power Electron.

166

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“…These problems cause an overall reduction in the efficiency, and can result in a malfunction of the DC-DC buck converter [3].…”

Section: B Phase-locked Loopmentioning

confidence: 99%

A Wide Input Range, 95.4% Power Efficiency DC-DC Buck Converter with a Phase-Locked Loop in 0.18 ㎛ BCD

Kim¹,

Park²,

Park³

et al. 2016

Journal of Power Electronics

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This paper presents a DC-DC buck converter with a Phase-Locked Loop (PLL) that can compensates for power efficiency degradation over a wide input range. Its switching frequency is kept at 2 MHz and the delay difference between the High side driver and the Low side driver can be minimized with respect to Process, Voltage and Temperature (PVT) variations by adopting the PLL. The operation mode of the proposed DC-DC buck converter is automatically changed to Pulse Width Modulation (PWM) or PWM frequency modes according to the load condition (heavy load or light load) while supporting a maximum load current of up to 1.2 A. The PWM frequency mode is used to extend the CCM region under the light load condition for the PWM operation. As a result, high efficiency can be achieved under the light load condition by the PWM frequency mode and the delay compensation with the PLL. The proposed DC-DC buck converter is fabricated with a 0.18 µm BCD process, and the die area is 3.96 mm 2 . It is implemented to have over a 90 % efficiency at an output voltage of 5 V when the input range is between 8 V and 20 V. As a result, the variation in the power efficiency is less than 1 % and the maximum efficiency of the proposed DC-DC buck converter with the PLL is 95.4 %.

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“…Voltage drop at low current source injection [19], short circuit current [20], turn-off time [21] and threshold voltage v th [22] based TSEPs have been applied for the online estimation of IGBT T j . Since the device manufacturer trades off the IGBT area to that devoted to diode area, the anti-parallel P-i-N diodes can be more thermally stressed than IGBTs in some severe working conditions [23][24].…”

Section: Introductionmentioning

confidence: 99%

Online High-Power p-i-n Diode Junction Temperature Extraction With Reverse Recovery Fall Storage Charge

Luo

Chen

et al. 2017

IEEE Trans. Power Electron.

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This paper proposes a method to extract the junction temperature of high-voltage and high-power P-i-N diodes. It is investigated that the swept-out charge during reverse recovery current fall time is affected by junction temperature variation, which makes the swept-out charge a possible thermo-sensitive electrical parameter (TSEP). Thanks to the specific package of high-power IGBT modules with P-i-N diodes, the swept-out charge of a P-i-N diode can be measured by the induced voltage v eE on the parasitic inductor L eE between Kelvin and power emitter terminals. In typical inductive half-bridge circuit, the comprehensive analysis of commutation between the upper P-i-N diode and lower enabled IGBT, discloses the monotonic relationship among the reverse recovery charge, reverse current fall time, and junction temperature. A double pulse chopper circuit is used to validate the theoretical analysis. The experimental results show that the dependency between diode junction temperature and charge during the reverse recovery current fall time is approximately linear. A 3-D look-up table is calibrated and can be used to estimate the P-i-N diode junction operating temperature. Finally, an experimental comparison of four TSEPs for P-i-N diode is presented to verify the feasibility of implementation of proposed TSEP.Index Terms -High-power P-i-N diodes, thermo-sensitive electrical parameter, reverse recovery charge, junction temperature extraction.I. . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

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Junction Temperature Measurement of IGBTs Using Short Circuit Current as a Temperature Sensitive Electrical Parameter for Converter Prototype Evaluation

Cited by 93 publications

References 34 publications

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

A Wide Input Range, 95.4% Power Efficiency DC-DC Buck Converter with a Phase-Locked Loop in 0.18 ㎛ BCD

Online High-Power p-i-n Diode Junction Temperature Extraction With Reverse Recovery Fall Storage Charge

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