Junction Temperature Prediction of a Multiple-chip IGBT Module under DC Condition

Wei, Lixiang; Kerkman, R.J.; Lukaszewski, Richard A.; Brown, Brian P.; Gollhardt, Neil; Weiss, Bruce W.

doi:10.1109/ias.2006.256611

Cited by 27 publications

(16 citation statements)

References 14 publications

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“…However, it is difficult to know the actual junction temperature during operation and hence verify the model because of the sealed module packaging. In addition, most traditional thermal analysis models can not accurately calculate the junction temperatures in a multi-chip paralleled IGBT module due to simplification such as the ignorance of thermal coupling between the chips [6][7]. Given the strong dependence of power losses on the temperature itself, it may be crucial to take into account the thermal coupling effect within the multi-chip paralleled IGBT modules, for a more valid thermal analysis of wind turbine power converters.…”

Section: Introductionmentioning

confidence: 99%

“…Assumptions are made as follows: 1) there is no effect of different chip temperatures on the dynamic current sharing [7]; 2) each layer is connected perfectly without relative movement; 3) there is no heat spreading through the silica gel; 4) all heat comes from the active junctions and flows to the cooling air below the heat-sink; 5) the ambient temperature is 50 º C; 6) there is no effect of bond wires or internal bus bars on the temperature [17]. Based on these, a 3D finite element model of the multi-chip paralleled IGBT module is established using ANSYS, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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“…In this figure, Z jc and Z jcd are the thermal impedance between the junction and case layer of the IGBT and diode chip. Z ch and Z chd are the approximated as the same thermal impedance between the case layer and the heat-sink as shown in reference [1] since the studied IGBTs in this paper have a similar substrate layout as in this reference…”

Section: A Thermal Modelling Of the Diode And Igbt Chipsmentioning

confidence: 97%

Evaluation of Power Semiconductors Power Cycling Capabilities for Adjustable Speed Drive

Wei

Kerkman

Lukaszewski

2008

2008 IEEE Industry Applications Society Annual Meeting

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this paper analyzes the power cycling capability of semiconductor under various conditions for adjustable speed drive (ASD). An analysis is made that calculates the Mean Time To Failure (MTTF) of the semiconductor under various conditions, including low speed operation capability, high speed thermal capability and overload capability. After that, the MTTF estimations of the IGBT under different heatsink design and different drive ratings are studied. This paper will show that the MTTF of the inverter may be very short under some very common operating conditions. Thus, it is prudent to size the drive properly in order to avoid earlier failure.

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“…It is easy for calculation, however, the solution neglected the fact that the parameters of semiconductor devices are temperature dependent values. In [13], the equivalent RC thermal network, including thermal resistance and heat capacity, provides a solution to integrate thermal model with electric circuit model. It contributed to the fast calculation of thermal calculations, however, it did not consider the temperature dependence of the power loss distributions.…”

Section: Introductionmentioning

confidence: 99%

Dynamic electro-thermal modeling in Power Electronics Building Block (PEBB) applications

Wang

Khambadkone

2010

2010 IEEE Energy Conversion Congress and Exposition

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This paper proposes a dynamic electro-thermal methodology via a reasonable iterative algorithm for Power Electronics Building Block (PEBB) application. The modeling includes an improved power loss distribution model which has temperature dependent self-improvement ability and an effective thermal model providing a fast temperature calculation, which can be integrated with electrical model directly. Simulation results are eventually presented to verify the effectiveness of the proposed modeling method in an PEBB application. The proposed dynamic electro-thermal model is proved that it can provide fast and accurate information for shifting PEBBs in their parallel operation and thus improve the PEBB's efficiency and semiconductor's life time.

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Junction Temperature Prediction of a Multiple-chip IGBT Module under DC Condition

Cited by 27 publications

References 14 publications

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Evaluation of Power Semiconductors Power Cycling Capabilities for Adjustable Speed Drive

Dynamic electro-thermal modeling in Power Electronics Building Block (PEBB) applications

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