Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

Abstract

The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

Ultra‐Narrow Depletion Layers in a Hematite Mesocrystal‐Based Photoanode for Boosting Multihole Water Oxidation

“…The peak intensity of the (104) face was found to gradually increase with the solvothermal treatment time, consistent with the evolution of the crystal orientation observed from the SAED patterns. This suggested that increasing the degree of crystallinity of hematite by increasing the solvothermal treatment time or temperature led to a preference for the (104) face, and this observation has also been reported elsewhere . The grain sizes estimated from the line broadening of the main diffraction peak (104) or (110) using the Scherrer equation were almost identical to the NP sizes estimated from TEM images.…”