2009
DOI: 10.1021/nl901348d
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Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

Abstract: We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where Ga(x)In(1-x)As is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/Ga(x)In(1-x)As/InAs, retaining straight nanowire configurati… Show more

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Cited by 90 publications
(110 citation statements)
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“…[3] and that the T g , 423 1C, used in Ref. [21] for Au-catalyzed InAs NWs lies within the range given above.…”
Section: Introductionmentioning
confidence: 56%
“…[3] and that the T g , 423 1C, used in Ref. [21] for Au-catalyzed InAs NWs lies within the range given above.…”
Section: Introductionmentioning
confidence: 56%
“…Maintaining a Ga concentration corresponding to x $ 0.35 in each Ga x In 1Àx As segment ensures a high fraction of straight axially grown nanowires. 24,25 The wires predominantly exhibits the hexagonal wurtzite (WZ) structure and the preferential growth direction is along the hexagonal closed packed [0001] WZ as inferred from electron diffraction data shown in Figure 2(b). 23,[26][27][28] Our analysis of the multiple Ga Ga x In 1Àx As/InAs interface in Z-contrast HAADF-STEM imaging as shown in Figure 1(b).…”
mentioning
confidence: 99%
“…More supersaturated elements are precipitated out and this leads to the NW growth. This process is influenced by the substrate, the growth temperature, the catalyst, the V/III flux ratio and the flux types used [75][76][77][78]. These factors thus jointly affect the physical dimensions and the crystal quality of the resulting NWs.…”
Section: Low-dimensional Nanostructures Of Gasb Materialsmentioning
confidence: 99%